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High Resistivity 8inch 200mm Silicon Carbide Wafer Production Grade 4H-N
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
| Model Number: | Silicon Carbide |
Payment & Shipping Terms:
| Minimum Order Quantity: | 5 |
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| Delivery Time: | 2 weeks |
| Payment Terms: | 100%T/T |
| Supply Ability: | 100000 |
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Detail Information |
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| Material: | Silicon Carbide | Diameter: | 2inch 3inch 4inch 6inch 8inch |
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| Grade: | Production/ Research/ Dummy | Thickness: | 350um 500um |
| Conductivity: | High/Low Conductivity | Orientation: | On-Axis/Off-Axis |
| Resistivity: | High/Low Resistivity | Bow/Warp: | ≤50um |
| High Light: | High Resistivity Sic Wafer,8inch 4H-N Silicon Carbide Wafer,Production Grade Silicon Carbide Wafer |
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Product Description
Product Description:
As the leading manufacturer and supplier ofSiC (Silicon Carbide)substrates wafers, ZMSH offers the best price on the market for 2 inch and 3 inch Research grade Silicon Carbide substrates wafers. SiC substrates wafers are widely used in electronic devices with high power and high frequency. Light Emitting Diode (LED) is one of the many electronic devices that reap the benefits of SiC substrate wafers. LED is a type of semiconductor that combines electrons and holes to form an energy-efficient cold light source. LED is energy-saving and have a longer lifespan compared to traditional light sources, making them an attractive choice for industrial applications. Therefore, with the best price and the usage of the SiC substrate wafer in various electronic devices, ZMSH is the further choice for the manufacturers who want to purchase Silicon Carbide substrates wafer.Features:
Silicon Carbide (SiC) single crystal has excellent thermal conductivity properties, high saturation electron mobility, and high voltage breakdown resistance. It is suitable for preparing high frequency, high power, high temperature, and radiation-resistant electronic devices.
SiC single crystal has many excellent properties, including high thermal conductivity, high saturated electron mobility, and strong anti-voltage breakdown. Owing to these advantages, SiC single crystal is suitable for preparation of high frequency, high power, high temperature and radiation-resistant electronic devices.
Technical Parameters:
Product Name: Silicon carbide substrate, Silicon carbide wafer, SiC wafer, SiC substrate.
Growth method: MOCVD.
Crystal Structure: 6H and 4H.
Lattice Parameters: 6H (a=3.073 Å, c=15.117 Å); 4H (a=3.076 Å, c=10.053 Å).
Stacking Sequence: 6H (ABCACB), 4H (ABCB).
Grade: Production Grade, Research Grade, Dummy Grade.
Conductivity type: N-type or Semi-Insulating.
Band-gap: 3.23 eV.
Hardness: 9.2 mohs.
Thermal Conductivity @300K: 3.2~4.9 W/ cm.K.
Dielectric constants: e(11) = e(22) = 9.66, e(33) = 10.33.
Resistivity: 4H-SiC-N (0.015~0.028 Ω·cm); 6H-SiC-N (0.02~0.1 Ω·cm); 4H/6H-SiC-SI (>1E7 Ω·cm).
Packing: Class 100 clean bag, in class 1000 clean room.
Applications:
Silicon Carbide Wafer (SiC wafer), including 4H-N Type SiC substrate and Semi-Insulating SiC substrate, is a great choice for those in the automotive electronics, optoelectronic devices, and industrial application markets. This strong and resistant material is the ideal choice for use in such industrial scenarios where stability and durability are a must and it has become a favorite among many users.
The properties of SiC wafers, including its excellent semiconductor properties and superior temperature resistance, make it an ideal choice for automotive electronics. Its high temperature resistance also makes it ideal for use in some optoelectronic devices that require extraordinary performance under various temperature environments. Finally, its superior electrical and thermal conductivity make it perfect for industrial applications in places such as chemical plants, power plants, etc.
The superior properties of SiC wafer make it an ideal choice for a variety of applications. It is a great option for automotive electronics, optoelectronic devices, and even industrial applications. If you are looking for a superior material with superior properties, then the Silicon Carbide Wafer is the ideal choice for you.
Support and Services:
Silicon Carbide Wafer offers a variety of technical support and services to ensure that our customers get the most out of their product. Our services include:
- Technical assistance and troubleshooting
- Repair and maintenance
- Product testing and calibration
- Customized solution design
- Software and firmware updates
- Training and certification
Packing and Shipping:
Silicon Carbide Wafers are typically packaged in a sealed, moisture-proof package to protect them from environmental conditions while they are shipped. They are usually shipped in a box or envelope with foam or bubble wrap to ensure the wafers are safe and secure during transit. The package should also be clearly labeled with the customer's name, address, and any other important information.
FAQ:
- Q: What is Silicon Carbide Wafer?
- A: Silicon Carbide Wafer is a type of semiconductor material made from silicon carbide, which has excellent heat resistance and thermal conductivity compared to other materials.
- Q: What is the brand name of Silicon Carbide Wafer?
- A: The brand name of Silicon Carbide Wafer is ZMSH.
- Q: What is the model number of Silicon Carbide Wafer?
- A: The model number of Silicon Carbide Wafer is Silicon Carbide.
- Q: Where is Silicon Carbide Wafer manufactured?
- A: Silicon Carbide Wafer is manufactured in China.
- Q: What is the minimum order quantity for Silicon Carbide Wafer?
- A: The minimum order quantity for Silicon Carbide Wafer is 5.
- Q: How long does it take to deliver Silicon Carbide Wafer?
- A: It takes 2 weeks to deliver Silicon Carbide Wafer.
- Q: What is the payment terms for Silicon Carbide Wafer?
- A: The payment terms for Silicon Carbide Wafer is 100%T/T.
- Q: What is the supply ability for Silicon Carbide Wafer?
- A: The supply ability for Silicon Carbide Wafer is 100000.