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4inch 101.6mm Sapphire Wafer Substrate Carrier Single Side Polished Single Crystal Al2O3
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
| Certification: | ROHS |
| Model Number: | 4INCH*0.5mmt |
Payment & Shipping Terms:
| Minimum Order Quantity: | 25pcs |
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| Price: | by case |
| Packaging Details: | in 25pcs cassette wafer box under 100grade cleaning room |
| Delivery Time: | 1 weeks |
| Payment Terms: | T/T, Western Union, MoneyGram |
| Supply Ability: | 1000pcs per month |
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Detail Information |
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| Material: | Sapphire Single Crystal Al2O3 99.999% | Orientation: | C-AXIS/A-AXIS/M-AXIS/M-AXIS |
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| Surface: | SSP DSP Or Grinding | Thickness: | 0.17mm, 0.5mm Or Other |
| Application: | Led Or Optical Glass | Growth Method: | Ky |
| SIZE: | 4inch DIA100mm | Package: | 25/Cassette |
| Highlight: | 4inch Sapphire Wafer Substrate Carrier,Single Crystal Al2O3 Sapphire Substrate,Single Side Polished Substrate Carrier |
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Product Description
4inch 101.6mm Sapphire Wafer Substrate Carrier Single Side Polished Single Crystal Al2O3
About synthetic sapphire crystal
Sapphire is a single crystal of alumina and is the second-hardest material in nature, after diamond. Sapphire has good light transmittance, high strength, collision resistance, wear resistance, corrosion resistance, and high temperature and high-pressure resistance, biocompatibility is an ideal substrate material for the production of semiconductor optoelectronic devices, the electrical properties of sapphire make it become the substrate material for the production of the white and blue LED.
Our company's long-term production thickness ≧0.1mm, and its shape size ≧Φ2" high precision sapphire wafer. In addition to the conventional Φ2 ", Φ4 ", Φ6 ", Φ8 ", Φ10 ", Φ12 " and other sizes can be customized, please contact our sales staff.
The sapphire (Al₂O) ₃ substrate is a kind of material for LED chips. Due to its high stability, sapphire ₃ is suitable for high-temperature growth. Finally, sapphire is mechanically strong and easy to handle and clean. Therefore, sapphire is generally used as a substrate for most processes.
Sapphire Properties
| Physical | |
| Chemical formula | Al2O3 |
| Density | 3.97 g/cm3 |
| Hardness | 9 Mohs |
| Melting point | 2050oC |
| Max. use temperature | 1800-1900oC |
| Mechanical | |
| Tensile strength | 250-400 MPa |
| Compressive strength | 2000 MPa |
| Poisson's ratio | 0.25-0.30 |
| Young's Modulus | 350-400 GPa |
| Bending strength | 450-860 MPa |
| Rapture Modulus | 350-690 MPa |
| Thermal | |
| Linear expansion rate (at 293-323 K) | 5.0*10-6K-1(⊥ C) |
| 6.6*10-6K-1(∥ C) | |
| Thermal conductivity (at 298 K) | 30.3 W/(m*K)(⊥ C) |
| 32.5 W/(m*K)(∥ C) | |
| Specific heat (at 298 K) | 0.10 cal*g-1 |
| Electrical | |
| Resistivity (at 298 K) | 5.0*1018 Ω*cm(⊥ C) |
| 1.3-2.9*1019 Ω*cm(∥ C) | |
| Dielectric constant (at 298 K, in 103-109 Hz interval) | 9.3 (⊥ C) |
| 11.5 (∥ C) | |
Synthetic sapphire is a transparent single crystal 99.99% pure Al2O3 that exhibits a unique combination of physical, chemical, electrical and optical properties: high thermal conductivity, high strength, scratch resistance, hardness (9 on the Mohs scale), transparent in a wide range of wavelength, chemical inertness.
High crystal perfection, low reactivity, and appropriate unit cell size make sapphire an excellent substrate in the semiconductor industry for blue light-emitting diodes (LED).
Since Nobel Laureate in Physics Shuji Nakamura used the sapphire substrate in the 1990s for LED, the demand for sapphire crystal has been growing rapidly.
It drives the development of new markets like general lighting, backside lighting in TV-sets, displays, consumer appliances, aerospace and defense, and other applications
Specifications of 4inch sapphire wafer substrate carrier
| Specs | 2 inch | 4 inch | 6 inch | 8inch |
| Dia | 50.8 ± 0.1 mm | 100 ± 0.1 mm | 150 ± 0.1 mm | 200 ± 0.1 mm |
| Thick | 430 ± 25 um | 650 ± 25 um | 1300 ± 25 um | 1300 ± 25 um |
| Ra | Ra ≤ 0.3 nm | Ra ≤ 0.3nm | Ra ≤ 0.3nm | Ra ≤ 0.3 nm |
| TTV | ≤ 10um | ≤ 10um | ≤ 10um | ≤ 10um |
| Tolerance | ≤ 3 um | ≤ 3 um | ≤ 3 um | ≤ 3 um |
| Quality surface | 20/10 | 20/10 | 20/10 | 20/10 |
| Surface state | DSP SSP Grinding | |||
| Shape | Circle with notch or flatness | |||
| Chamfer | 45°,C Shape | |||
| Material | Al2O3 99.999% | |||
| N/O | Sapphire wafer | |||
The material is grown and orientated, and substrates are fabricated and polished to an extremely smooth damage free Epi-Ready surface on one or both sides of the wafer. A variety of wafer orientations and sizes up to 6" in diameter are available.
A-Plane sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics.
C-Plane substrates - tend to be used for all-V and ll-Vl compounds, such as GaN, for bright blue and green LED and laser diodes.
R-Plane substrates - these are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications.
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Standard wafer 2 inch C-plane sapphire wafer SSP/DSP
3 inch C-plane sapphire wafer SSP/DSP 4 inch C-plane sapphire wafer SSP/DSP 6 inch C-plane sapphire wafer SSP/DSP |
Special Cut
A-plane (1120) sapphire wafer R-plane (1102) sapphire wafer M-plane (1010) sapphire wafer N-plane (1123) sapphire wafer C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis Other customized orientation |
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Customized Size
10*10mm sapphire wafer 20*20mm sapphire wafer Ultra thin (100um) sapphire wafer 8 inch sapphire wafer |
Patterned Sapphire Substrate (PSS)
2 inch C-plane PSS 4 inch C-plane PSS |
| 2inch |
DSP C-AXIS 0.1mm/0.175mm/0.2mm/0.3mm/0.4mm /0.5mm/ 1.0mmt SSP C-axis 0.2/0.43mm (DSP＆SSP) A-axis/M-axis/R-axis 0.43mm
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| 3inch |
DSP/ SSP C-axis 0.43mm/0.5mm
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| 4Inch |
dsp c-axis 0.4mm/ 0.5mm/1.0mm ssp c-axis 0.5mm/0.65mm/1.0mmt
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| 6inch |
ssp c-axis 1.0mm/1.3mmm
dsp c-axis 0.65mm/ 0.8mm/1.0mmt
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101.6mm 4inch Sapphire wafer sapphire Details
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