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Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um

Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um

Products - Semiconductor Substrate
  • High Light

    N Type GaAs Epi Wafer

    ,

    Ga Doped Silicon Wafer Substrate

    ,

    Ge Wafers Silicon Substrate

  • Material
    Ge Single Crystal Ge Window
  • Application
    Infrared Optics Elements
  • Type
    Un-doped/ Ga-doped/ N-TYPE
  • Resistivity
    1-100ohm
  • Orientation
    <100>
  • SIZE
    2inch/3inch/4inch
  • Surface
    Double Side Polished
  • OEM
    Ok
  • Place of Origin
    China
  • Brand Name
    zmkj
  • Certification
    ROHS
  • Model Number
    4inch
  • Minimum Order Quantity
    5pcs
  • Price
    by case
  • Packaging Details
    single wafer container or customzied container box under cleaning room
  • Delivery Time
    2-4weeks
  • Payment Terms
    T/T, Western Union
  • Supply Ability
    1000pcs/month

Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um

  • Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um
  • Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um
  • Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um
  • Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um
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2INCH dia50.8mm Ga doped Ge substrate 4inch N-type 500um Ge wafers

 

Ge wafer for microelectronic application

N type, Sb doped Ge wafer
N type,undoped Ge wafer
P type,Ga doped Ge wafer
Available size:2”-6”
Available orientation: (100),(111),or custom specs.
Available grade: IR grade, electronic grade and cell grade
Resistivity:
N - type : 0.007-30 ohm-cm
P - type : 0.001-30 ohm-cm
Undoped : >=30 ohm-cm
Surface: as-cut, single side polished, double side polished
 
Ge wafer for optical grade:
SL.No Material Specifications: 　
1 Crystalline Form : Polycrystalline
2 Conductivity Type : n-type
3 Absorption Coefficient, at 25°C 0.035cm-1 max @10.6µm
4 Typical Resistivity : 3-40 ohm-cm
5 Density : 5.3 g/cc
6 Mohs Hardness : 6.3
7 Oxygen Content : < 0.03 ppm
8 Holes and Inclusions: <0.05 mm
9 Poisson Ratio : 0.278
10 Youngs Modulus (E) : 100 Gpa
     
SL.No Optical Properties: 　
1 dn/dt from 250-350 K : 4 X 10-4 K-1
2 Transmission at 25°C @10.6 µm wavelength 　
　 for uncoated sample of thickness 10mm : Max. 47% or more
3 Refractive Index @ 10.8 µm : 4.00372471±0.0005
     
SL.No
 Thermal Properties 　
1 Melting Point (K) : 1210.4
2 Heat Capacity @ 300K (J/kg.K): 322
3 Thermal Conductivity @293 K : 59 Wm-1 K-1
4 Coefficient Thermal Expansion @ (20°C) (10-6 K): 5.8

dia25.4mm Ge windows Single Crystal Germanium Ge Wafer for Semiconductor device

 

Company Description

ZMKJ  is a worldwide supplier of single crystal  Germanium lens and single crystal Ge ingot , we have a strong advantage in providing single crystal wafer to micro-electronics and opto-electronics industry in diameter range from 2 inch to 6inch .

Ge wafer is an elemental and popular semiconductor material , due to its excellent crystallographic properties and unique electric properties , Ge wafer is widly used in Sensor , Solar cell and Infrared optics applications .

We can provide low dislocation and epi ready Ge wafers to meet your unique requirement. Ge wafer is produced as per semiconductor,with a good quality control system ,  ZMKJ Is dedicated to providing clean and high quality Ge wafer products .

we can offers both electronics grade and IR grade Ge wafer , please contact us for more Ge product information.

 

In the range of 2-12 μm, germanium is the most commonly used material for the production of spherical lenses and windows for high efficiency infrared in imaging system. Germanium has a high refractive index (about 4.0 through 2-14μm band), usually do not need to be modified due to its low chromatic aberration in low power imaging systems.

Single Crystal Germanium Wafer Capability

we can offer both electronics grade and IR grade Ge wafer and Ge ingot , please contact us for more Ge product information .
 
Conductivity Dopant Resistivity
( ohm-cm )		 Wafer Size
NA Undoped >= 30 Up to 4 inch
N type Sb 0.001 ~ 30 Up to 4 inch
P type Ga 0.001 ~ 30 Up to 4 inch

Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um 0

Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um 1

Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um 2Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um 3

Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um 4

Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um 5

Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500um 6

FAQ
Q: Do you provide samples? Is it free or charged?
· We'd like to supply samples for free if we have it in stock, but we don't pay freight.
Q: How long is your delivery time?
· Regarding inventory, it is 3 working days;
· For customized one, it's about 15-25 working days, depended on exact quantity and order date.
Q: Is it possible to customize special lens?
· Yes, to customize special optical element and coating are available here.
Q: How to pay?
· T/T, Alibaba online assurance payment, MoneyGram, West Union, Paypal and so on.
Q: How to ensure the safety of payment?
· ZMKJ is a reliable supplier , reputation and quality is life of our company, and we support Alibaba Trade Assurance.
Q: How do you ship goods?
· Low value sample: EUB, E Express of China Post, which is cheap;
· Light weight parcel: DHL, FedEx, TNT, UPS, EMS, SF Express, China Post;
· Heavy cargo: by air or by sea, ship on pallet.
Our company enjoy a considerable discount owing to long-term cooperation with courier company.
Tags:

semiconductor wafer

wafer substrate

gasb substrate

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