4" Sapphire Based GaN Templates Semiconductor Substrate

4" Sapphire Based GaN Templates Semiconductor Substrate

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    5G saw gan templates


    4" gan templates


    GaN semiconductor Substrate

  • Substrate
    Sapphire Wafer
  • Layer
    GaN Template
  • Layer Thickness
  • Conductivity Type
  • Orientation
  • Application
    High Power/high Frequency Electronic Devices
  • Application 2
    5G Saw/BAW Devices
  • Silicon Thickness
  • Place of Origin
  • Brand Name
  • Model Number
    4inch GaN-sapphire
  • Minimum Order Quantity
  • Price
    by case
  • Packaging Details
    single wafer container in cleaning room
  • Delivery Time
    in 30days
  • Payment Terms
    T/T, Western Union, paypal
  • Supply Ability

4" Sapphire Based GaN Templates Semiconductor Substrate

2inch 4inch 4" Sapphire based GaN templates GaN film on sapphire substrate


Properties of GaN


Chemical properties of GaN

1) At room temperature, GaN is insoluble in water, acid and alkali.

2)Dissolved in a hot alkaline solution at a very slow rate.

3) NaOH, H2SO4 and H3PO4 can quickly corrode the poor quality of GaN, can be used for these poor quality GaN crystal defect detection.

4) GaN in the HCL or hydrogen, at high temperature presents unstable characteristics.

5) GaN is the most stable under nitrogen.

Electrical properties of GaN

1) The electrical properties of GaN are the most important factors affecting the device.

2) The GaN with no doping was n in all the cases, and the electron concentration of the best sample was about 4*(10^16)/c㎡.

3) Generally, the prepared P samples are highly compensated.

Optical properties of GaN

1) Wide band gap compound semiconductor material with high band width (2.3~6.2eV), can cover the red yellow green, blue, violet and ultraviolet spectrum, so far is that any other semiconductor materials are unable to achieve.

2) Mainly used in blue and violet light emitting device.

Properties of GaN Material

1) High frequency property, arrive at 300G Hz. (Si is 10G & GaAs is 80G)

2) High temperature property, Normal work at 300℃, very suitable for aerospace, military and other high temperature environment.

3) The electron drift has high saturation velocity, low dielectric constant and good thermal conductivity.

4) Acid and alkali resistance, corrosion resistance, can be used in harsh environment.

5) High voltage characteristics, impact resistance, high reliability.

6) Large power, the communication equipment is very eager.

Application of GaN

Main usage of GaN:

1) light emitting diodes, LED

2) field effect transistors, FET

3) laser diodes, LD

C4" Sapphire Based GaN Templates Semiconductor Substrate 0aracteristic Specification


Other relaterd  4INCH  GaN Template Specification 


  GaN/ Al₂O₃ Substrates (4") 4inch 
Item  Un-doped N-type



Size  (mm) Φ100.0±0.5 (4")
Substrate Structure GaN on Sapphire(0001)
SurfaceFinished  (Standard: SSP Option: DSP)
Thickness (μm) 4.5±0.5; 20±2;Customized
Conduction Type  Un-doped N-type High-doped N-type
Resistivity  (Ω·cm)(300K) ≤0.5 ≤0.05 ≤0.01
GaN Thickness Uniformity
≤±10% (4")
Dislocation Density (cm-2)
Useable Surface Area >90%
Package  Packaged in a class 100 clean room environment.

4" Sapphire Based GaN Templates Semiconductor Substrate 1

4" Sapphire Based GaN Templates Semiconductor Substrate 24" Sapphire Based GaN Templates Semiconductor Substrate 3

Crystal structure


Lattice constant (Å) a=3.112, c=4.982
Conduction band type Direct bandgap
Density (g/cm3) 3.23
Surface microhardness (Knoop test) 800
Melting point (℃) 2750 (10-100 bar in N2)
Thermal conductivity (W/m·K) 320
Band gap energy (eV) 6.28
Electron mobility (V·s/cm2) 1100
Electric breakdown field (MV/cm) 11.7

4" Sapphire Based GaN Templates Semiconductor Substrate 4