4" Sapphire Based GaN Templates Semiconductor Substrate

Basic Information
Place of Origin: China
Brand Name: ZMKJ
Model Number: 4inch GaN-sapphire
Minimum Order Quantity: 5pcs
Price: by case
Packaging Details: single wafer container in cleaning room
Delivery Time: in 30days
Payment Terms: T/T, Western Union, paypal
Supply Ability: 50pcs/month
Substrate: Sapphire Wafer Layer: GaN Template
Layer Thickness: 1-5um Conductivity Type: N/P
Orientation: 0001 Application: High Power/high Frequency Electronic Devices
Application 2: 5G Saw/BAW Devices Silicon Thickness: 525um/625um/725um
High Light:

5G saw gan templates

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4" gan templates

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GaN semiconductor Substrate

2inch 4inch 4" Sapphire based GaN templates GaN film on sapphire substrate

 

Properties of GaN

 

Chemical properties of GaN

1) At room temperature, GaN is insoluble in water, acid and alkali.

2)Dissolved in a hot alkaline solution at a very slow rate.

3) NaOH, H2SO4 and H3PO4 can quickly corrode the poor quality of GaN, can be used for these poor quality GaN crystal defect detection.

4) GaN in the HCL or hydrogen, at high temperature presents unstable characteristics.

5) GaN is the most stable under nitrogen.

Electrical properties of GaN

1) The electrical properties of GaN are the most important factors affecting the device.

2) The GaN with no doping was n in all the cases, and the electron concentration of the best sample was about 4*(10^16)/c㎡.

3) Generally, the prepared P samples are highly compensated.

Optical properties of GaN

1) Wide band gap compound semiconductor material with high band width (2.3~6.2eV), can cover the red yellow green, blue, violet and ultraviolet spectrum, so far is that any other semiconductor materials are unable to achieve.

2) Mainly used in blue and violet light emitting device.

Properties of GaN Material

1) High frequency property, arrive at 300G Hz. (Si is 10G & GaAs is 80G)

2) High temperature property, Normal work at 300℃, very suitable for aerospace, military and other high temperature environment.

3) The electron drift has high saturation velocity, low dielectric constant and good thermal conductivity.

4) Acid and alkali resistance, corrosion resistance, can be used in harsh environment.

5) High voltage characteristics, impact resistance, high reliability.

6) Large power, the communication equipment is very eager.

 
Application of GaN

Main usage of GaN:

1) light emitting diodes, LED

2) field effect transistors, FET

3) laser diodes, LD

 
                             Specification 
 
C4" Sapphire Based GaN Templates Semiconductor Substrate 0aracteristic Specification

 

Other relaterd  4INCH  GaN Template Specification 

 

  GaN/ Al₂O₃ Substrates (4") 4inch 
Item  Un-doped N-type

High-doped

N-type

Size  (mm) Φ100.0±0.5 (4")
Substrate Structure GaN on Sapphire(0001)
SurfaceFinished  (Standard: SSP Option: DSP)
Thickness (μm) 4.5±0.5; 20±2;Customized
Conduction Type  Un-doped N-type High-doped N-type
Resistivity  (Ω·cm)(300K) ≤0.5 ≤0.05 ≤0.01
GaN Thickness Uniformity
 
≤±10% (4")
Dislocation Density (cm-2)
 
≤5×108
Useable Surface Area >90%
Package  Packaged in a class 100 clean room environment.
 

4" Sapphire Based GaN Templates Semiconductor Substrate 1

4" Sapphire Based GaN Templates Semiconductor Substrate 24" Sapphire Based GaN Templates Semiconductor Substrate 3

Crystal structure

Wurtzite

Lattice constant (Å) a=3.112, c=4.982
Conduction band type Direct bandgap
Density (g/cm3) 3.23
Surface microhardness (Knoop test) 800
Melting point (℃) 2750 (10-100 bar in N2)
Thermal conductivity (W/m·K) 320
Band gap energy (eV) 6.28
Electron mobility (V·s/cm2) 1100
Electric breakdown field (MV/cm) 11.7

4" Sapphire Based GaN Templates Semiconductor Substrate 4

Contact Details
Manager

Phone Number : +8615801942596

WhatsApp : +8615801942596