0.5mm Thickness Dia 150mm 4H-N Silicon Carbide Wafer
|Place of Origin:||CHINA|
|Model Number:||6inch sic wafers 4h-n|
Payment & Shipping Terms:
|Minimum Order Quantity:||1pcs|
|Packaging Details:||single wafer package in 100-grade cleaning room|
|Payment Terms:||T/T, Western Union, MoneyGram|
|Material:||SiC Single Crystal 4H-N Type||Grade:||Dummy /Production Grade|
|Thicnkss:||0.35mm 0.5mm||Suraface:||Double Side Polished|
|Application:||Device Maker Polishing Test||Diameter:||150±0.5mm|
4H-N Silicon Carbide Wafer,
Dia 150mm Silicon Carbide Wafer,
SiC Single Crystal Wafer
2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers
4inch 2inch 6inch silicon carbide 4H-N as-cut Sic Wafer SiC wafers by customized thickness
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
|Property||4H-SiC, Single Crystal||6H-SiC, Single Crystal|
|Lattice Parameters||a=3.076 Å c=10.053 Å||a=3.073 Å c=15.117 Å|
|Density||3.21 g/cm3||3.21 g/cm3|
|Therm. Expansion Coefficient||4-5×10-6/K||4-5×10-6/K|
|Refraction Index @750nm||
no = 2.61
ne = 2.66
no = 2.60
ne = 2.65
|Thermal Conductivity (N-type, 0.02 ohm.cm)||
|Thermal Conductivity (Semi-insulating)||
|Band-gap||3.23 eV||3.02 eV|
|Break-Down Electrical Field||3-5×106V/cm||3-5×106V/cm|
|Saturation Drift Velocity||2.0×105m/s||2.0×105m/s|
Standard specification for sic wafers
High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification
4H-N Type / High Purity SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots
4H Semi-insulating / High Purity SiC wafer
2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
Customzied size for 2-6inch
About ZMKJ Company
ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) it is fine If you have your own express account ,If not,we could help you ship them and
Freight is in accordance with the actual settlement.
Q: How to pay?
A: T/T 100％ deposit before delivery.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.
(2) For customized commen products, the MOQ is 10pcs up.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 -4 weeks after you order contact.
Q: Do you have standard products?
A: Our standard products in stock. as like substrates 4inch 0.35mm.