Brand Name:	ZMKJ
Model Number:	UTI-AlN-150
MOQ:	3pcs
Price:	by case
Packaging Details:	single wafer container in cleaning room
Payment Terms:	T/T, Western Union, paypal

Detail Information

Product Description

Detail Information

Place of Origin:

China

Substrate:

Silicon Wafer

Layer:

AlN Template

Layer Thickness:

200-1000nm

Conductivity Type:

N/P

Orientation:

0001

Application:

High Power/high Frequency Electronic Devices

Application 2:

5G Saw/BAW Devices

Silicon Thickness:

525um/625um/725um

Supply Ability:

50pcs/month

Highlight:

AlN film on silicon substrate

500nm AlN templates

6" AlN templates

Product Description

diameter 150mm 8inch 4inch 6inch Silicon-based AlN templates 500nm AlN film on silicon substrate

Applications of AlN template

Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future

electronic devices. As a typical kind of 3rd/4th-generation semiconductor material, aluminum nitride (AlN) has

superior physical and chemical properties such as wide bandgap, high thermal conductivity, high breakdown filed,

high electronic mobility and corrosion/radiation resistance, and is a perfect substrate for optoelectronic devices,

radio frequency (RF) devices, high-power/high-frequency electronic devices, etc.. Particularly, AlN substrate is the

best candidate for UV-LED, UV detectors, UV lasers, 5G high-power/high-frequency RF devices and 5G SAW/BAW

devices, which could widely be used in environmental protection, electronics, wireless communications, printing,

biology, healthcare, military and other fields, such as UV purification/sterilization, UV curing, photocatalysis, coun

terfeit detection, high-density storage, medical phototherapy, drug discovery, wireless and secure communication,

aerospace/deep-space detection and other fields.

we have developed a serials of proprietary processes and technologies to fabricate

high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN

templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive

market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc

The factroy is an innovative high-tech company founded in 2016 by renowned Chinese Overseas professionals from semiconductor industry.

they focus its core business on development and commercialization of 3rd/4th-generation ultra-wide bandgap semiconductor AlN substrates,

AlN templates, fully automatic PVT growth reactors and related products and services for various high-tech industries.

it has been recognized as a global leader in this field. Our core products are key strategy materials listed in “Made in China ".

they have developed a serials of proprietary technologies and the-state-of-the art PVT growth reactors and facilities to

fabricate different sizes of high-quality single crystalline AlN wafers, AlN temlpates. We are one of the few world-leading

high-tech companies who own full AlN fabrication capa

bilities to produce high-quality AlN boules and wafers, and provide professional services and turn-key solutions to our customers,

arranged from the growth reactor and hotzone design, modeling and simulation, process design and optimization, crystal growth,

wafering and material characterization. Up to April 2019, they have applied more than 27 patents (including PCT).

Specification

Characteristic Specification

Model UTI-AlN-150S
Conductivity Type C-plane of Si single crystal wafer
Resistivity (Ω) >5000
AlN structure Wurtzite
Diameter (inch) 6inch
Substrate thickness (µm) 625 ± 15
AlN Film thickness (µm) 500nm
Orientation C-axis [0001] +/- 0.2°
Usable Area ≥95%
Cracks None
FWHM-2θXRD@(0002) ≤0.22°
FWHM-HRXRD@(0002) ≤1.5°
Surface Roughness [5×5µm] (nm) RMS≤6.0
TTV (µm) ≤7
Bow (µm) ≤40
Warp (µm) -30~30
Note: These characterization results may vary slightly depending on the equipments and/or software employed

6" Silicon Based AlN Templates 500nm AlN Film On Silicon Substrate 1

6" Silicon Based AlN Templates 500nm AlN Film On Silicon Substrate 2

Crystal structure	Wurtzite
Lattice constant (Å)	a=3.112, c=4.982
Conduction band type	Direct bandgap
Density (g/cm3)	3.23
Surface microhardness (Knoop test)	800
Melting point (℃)	2750 (10-100 bar in N2)
Thermal conductivity (W/m·K)	320
Band gap energy (eV)	6.28
Electron mobility (V·s/cm2)	1100
Electric breakdown field (MV/cm)	11.7

6" Silicon Based AlN Templates 500nm AlN Film On Silicon Substrate 4

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