5G Saw Diameter 10mm Single Crystal AlN Semiconductor Substrate

Basic Information
Place of Origin: China
Brand Name: ZMKJ
Model Number: UTI-AlN-10x10 single crystal
Minimum Order Quantity: 1pcs
Price: by case
Packaging Details: single wafer container in cleaning room
Delivery Time: in 30days
Payment Terms: T/T, Western Union, paypal
Supply Ability: 10pcs/month
Material: AlN Crystal Thickness: 400um
Orientation: 0001 Application: High Power/high Frequency Electronic Devices
Application 2: 5G Saw/BAW Devices Ra: 0.5nm
Surface Polished: Al Face Cmp, N-face Mp Crystal Type: 2H
High Light:

diameter 10mm aln substrate


5G saw Semiconductor Substrate


single crystal aln substrate


10x10mm or diameter 10mm dia25.4mm dia30mm, dia45mm, dia50.8mm  AlN substrate AlN single crystal wafers


Applications of   AlN template
Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future
electronic devices. As a typical kind of 3rd/4th-generation semiconductor material, aluminum nitride (AlN) has
superior physical and chemical properties such as wide bandgap, high thermal conductivity, high breakdown filed,
high electronic mobility and corrosion/radiation resistance, and is a perfect substrate for optoelectronic devices,
radio frequency (RF) devices, high-power/high-frequency electronic devices, etc.. Particularly, AlN substrate is the
best candidate for UV-LED, UV detectors, UV lasers, 5G high-power/high-frequency RF devices and 5G SAW/BAW
devices, which could widely be used in environmental protection, electronics, wireless communications, printing,
biology, healthcare, military and other fields, such as UV purification/sterilization, UV curing, photocatalysis, coun
terfeit detection, high-density storage, medical phototherapy, drug discovery, wireless and secure communication,
aerospace/deep-space detection and other fields.
we have developed a serials of proprietary processes and technologies to fabricate
high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN
templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive
market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc
We currently provide customers with standardized 10x10mm/Φ10mm/Φ15mm/Φ20mm/Φ25.4mm/Φ30mm/Φ50.8mm high quality nitrogen
Aluminum single crystal substrate products, and can also provide customers with 10-20mm non-polar
M-plane aluminum nitride single crystal substrate, or customize non-standard 5mm-50.8mm to customers
Polished aluminum nitride single crystal substrate. This product is widely used as a high-end substrate material
Used in UVC-LED chips, UV detectors, UV lasers, and various high power
/High temperature/high frequency electronic device field.
Characteristic Specification
  • Model                                                           UTI-AlN-10x10B-single crystal
  • Diameter                                                           10x10±0.5mm 
  • Substrate thickness (µm)                                      400 ± 50
  • Orientation                                                        C-axis [0001] +/- 0.5°

     Quality Grade              S-grade(super)    P-grade(production)       R-grade(Research) 

  • Cracks                                                  None                      None                                   <3mm 
  • FWHM-2θXRD@(0002)                  <150                            <300                                    <500
  • FWHM-HRXRD@(10-12)                 <100                         <200                                     <400
  • Surface Roughness [5×5µm] (nm)          Al-face  CMP <0.5nm;     N-face(back surface) MP <1.2um; 
  • Usable area                                       90%
  • Absorbance                              <50 ;                   <70 ;                              <100;
  • 1st  OF length orientation                                         {10-10} ±5°;
  • TTV (µm)                                                                       ≤30
  • Bow (µm)                                                                        ≤30
  • Warp (µm)                                                                    -30~30
  • Note: These characterization results may vary slightly depending on the equipments and/or software employed
5G Saw Diameter 10mm  Single Crystal AlN Semiconductor Substrate 0

5G Saw Diameter 10mm  Single Crystal AlN Semiconductor Substrate 1

5G Saw Diameter 10mm  Single Crystal AlN Semiconductor Substrate 2


5G Saw Diameter 10mm  Single Crystal AlN Semiconductor Substrate 3

5G Saw Diameter 10mm  Single Crystal AlN Semiconductor Substrate 4

impurity element    C O Si B Na W P S Ti Fe
PPMW                        27 90 5.4 0.92 0.23 <0.1 <0.1 <0.5 0.46 <0.5
Crystal structure


Lattice constant (Å) a=3.112, c=4.982
Conduction band type Direct bandgap
Density (g/cm3) 3.23
Surface microhardness (Knoop test) 800
Melting point (℃) 2750 (10-100 bar in N2)
Thermal conductivity (W/m·K) 320
Band gap energy (eV) 6.28
Electron mobility (V·s/cm2) 1100
Electric breakdown field (MV/cm) 11.7


Contact Details

Phone Number : +8615801942596

WhatsApp : +8615801942596