products details

Home Products

Semiconductor Substrate

5G Saw Diameter 10mm Single Crystal AlN Semiconductor Substrate

All Category

Superconducting Thin Monocrystalline Substrate

Mr. Wang

Eric-wang@sapphire-substrate.com

+8615801942596

Contact Now

All Category

Superconducting Thin Monocrystalline Substrate

5G Saw Diameter 10mm Single Crystal AlN Semiconductor Substrate

Brand Name:	ZMKJ
Model Number:	UTI-AlN-10x10 single crystal
MOQ:	1pcs
Price:	by case
Packaging Details:	single wafer container in cleaning room
Payment Terms:	T/T, Western Union, paypal

Detail Information

Product Description

Detail Information

Place of Origin:

China

Material:

AlN Crystal

Thickness:

400um

Orientation:

0001

Application:

High Power/high Frequency Electronic Devices

Application 2:

5G Saw/BAW Devices

Ra:

0.5nm

Surface Polished:

Al Face Cmp, N-face Mp

Crystal Type:

Supply Ability:

10pcs/month

Highlight:

diameter 10mm aln substrate

5G saw Semiconductor Substrate

single crystal aln substrate

Product Description

10x10mm or diameter 10mm dia25.4mm dia30mm, dia45mm, dia50.8mm AlN substrate AlN single crystal wafers

Applications of AlN template

Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future

electronic devices. As a typical kind of 3rd/4th-generation semiconductor material, aluminum nitride (AlN) has

superior physical and chemical properties such as wide bandgap, high thermal conductivity, high breakdown filed,

high electronic mobility and corrosion/radiation resistance, and is a perfect substrate for optoelectronic devices,

radio frequency (RF) devices, high-power/high-frequency electronic devices, etc.. Particularly, AlN substrate is the

best candidate for UV-LED, UV detectors, UV lasers, 5G high-power/high-frequency RF devices and 5G SAW/BAW

devices, which could widely be used in environmental protection, electronics, wireless communications, printing,

biology, healthcare, military and other fields, such as UV purification/sterilization, UV curing, photocatalysis, coun

terfeit detection, high-density storage, medical phototherapy, drug discovery, wireless and secure communication,

aerospace/deep-space detection and other fields.

we have developed a serials of proprietary processes and technologies to fabricate

high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN

templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive

market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc

We currently provide customers with standardized 10x10mm/Φ10mm/Φ15mm/Φ20mm/Φ25.4mm/Φ30mm/Φ50.8mm high quality nitrogen
Aluminum single crystal substrate products, and can also provide customers with 10-20mm non-polar
M-plane aluminum nitride single crystal substrate, or customize non-standard 5mm-50.8mm to customers
Polished aluminum nitride single crystal substrate. This product is widely used as a high-end substrate material
Used in UVC-LED chips, UV detectors, UV lasers, and various high power
/High temperature/high frequency electronic device field.

Characteristic Specification

Model UTI-AlN-10x10B-single crystal
Diameter 10x10±0.5mm ；
Substrate thickness (µm) 400 ± 50
Orientation C-axis [0001] +/- 0.5°

Quality Grade S-grade(super) P-grade(production) R-grade(Research)

Cracks None None <3mm
FWHM-2θXRD@(0002) <150 <300 <500
FWHM-HRXRD@(10-12) <100 <200 <400
Surface Roughness [5×5µm] (nm) Al-face CMP <0.5nm; N-face(back surface) MP <1.2um;
Usable area 90%
Absorbance <50 ； <70 ； <100；
1st OF length orientation {10-10} ±5°；
TTV (µm) ≤30
Bow (µm) ≤30
Warp (µm) -30~30
Note: These characterization results may vary slightly depending on the equipments and/or software employed

5G Saw Diameter 10mm Single Crystal AlN Semiconductor Substrate 1

5G Saw Diameter 10mm Single Crystal AlN Semiconductor Substrate 2

5G Saw Diameter 10mm Single Crystal AlN Semiconductor Substrate 3

5G Saw Diameter 10mm Single Crystal AlN Semiconductor Substrate 4

impurity element C O Si B Na W P S Ti Fe

PPMW 27 90 5.4 0.92 0.23 <0.1 <0.1 <0.5 0.46 <0.5

Crystal structure	Wurtzite
Lattice constant (Å)	a=3.112, c=4.982
Conduction band type	Direct bandgap
Density (g/cm3)	3.23
Surface microhardness (Knoop test)	800
Melting point (℃)	2750 (10-100 bar in N2)
Thermal conductivity (W/m·K)	320
Band gap energy (eV)	6.28
Electron mobility (V·s/cm2)	1100
Electric breakdown field (MV/cm)	11.7

Tags:

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Gallium Nitride Wafer

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Gallium Nitride Wafer

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

products details

5G Saw Diameter 10mm Single Crystal AlN Semiconductor Substrate

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Gallium Nitride Wafer

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Gallium Nitride Wafer

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

5G Saw Diameter 10mm Single Crystal AlN Semiconductor Substrate

diameter 10mm aln substrate

5G saw Semiconductor Substrate

single crystal aln substrate