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October 26, 2023
Category Connection: Silicon Carbide Wafer
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Tags:
#silicon carbide substrate #sic wafer #silicon on sapphire wafers
Brief: Discover the high-performance 4H Semi-Insulating SiC Wafers, ideal for RF, microwave, and power electronic devices. With exceptional electrical and thermal properties, these 3-inch wafers are perfect for high-frequency and high-power applications. Learn more about their advantages in semiconductor manufacturing.
Related Product Features:
  • High resistivity and low carrier concentration for semi-insulating applications.
  • Excellent thermal conductivity and stability for efficient heat dissipation.
  • High breakdown voltage suitable for high-power and high-voltage devices.
  • Chemically inert and resistant to most acids and alkalis.
  • Transparent to infrared light, beneficial for optoelectronic applications.
  • Hard and abrasion-resistant with a Mohs hardness of 9.
  • Ideal for high-frequency RF power devices and microwave electronics.
  • Widely used in semiconductor manufacturing, telecommunications, and defense.
Faqs:
  • What are the key applications of 4H Semi-Insulating SiC Wafers?
    These wafers are ideal for high-frequency RF power devices, microwave electronics, high-temperature sensors, and high-power devices like Schottky diodes and MOSFETs.
  • Why is 4H Semi-Insulating SiC suitable for high-power applications?
    Due to its high breakdown voltage, excellent thermal conductivity, and stability, it efficiently handles high-power and high-voltage conditions.
  • How does the thermal conductivity of 4H Semi-Insulating SiC benefit electronic devices?
    Its high thermal conductivity ensures efficient heat dissipation, maintaining performance and reliability in high-temperature environments.
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