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Thick 350 um 2 Inch Single Crystal InP Semiconductor Substrate Prime

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February 20, 2023
Category Connection: Semiconductor Substrate
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Tags:
#semiconductor wafer #wafer substrate #gasb substrate
Brief: Discover the high-quality Single Crystal InP Indium Phosphide Wafers with thickness ranging from 350-650um. Ideal for high-frequency, high-speed, and high-power microwave devices, these wafers are precision-engineered for superior performance in electronics and optics.
Related Product Features:
  • Crystal grown by liquid-sealed straight-drawing technology (LEC) for stable electrical performance.
  • Precise crystal orientation with deviation of only ±0.5° using X-ray directional instrument.
  • Polished by chemical mechanical polishing (CMP) technology for surface roughness <0.5nm.
  • Available in 2-inch, 3-inch, and 4-inch diameters with customizable specifications.
  • Suitable for manufacturing high-frequency, high-speed, and high-power microwave devices.
  • Offers high electronic limit drift speed, good radiation resistance, and excellent heat conduction.
  • Can be doped with S+/Zn+/Fe+ for varied applications.
  • Packaged as 100 single or double side polished wafers for convenience.
Faqs:
  • Are you a trading company or manufacturer?
    Shanghai Xinkehui New Materials Co. Ltd. is a trading company with close collaboration with manufacturers, providing high-quality semiconductor wafers for various applications.
  • How long is your delivery time?
    Delivery time is typically 5-10 days if the goods are in stock, or 15-20 days if they need to be produced, depending on the quantity required.
  • Do you provide samples? Is it free or extra?
    Yes, we offer samples free of charge, but the customer is responsible for the freight costs.
  • What are your terms of payment?
    For payments <= 1000 USD, 100% in advance. For payments >=1000 USD, 50% T/T in advance and the balance before shipment.
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