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SiC Single Crystal Resistance Heating Crystal Growth Furnace For 6inch 8inch 12inch SiC Wafers Manufacture
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
| Model Number: | SiC ingot growth furnace |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
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| Packaging Details: | 5-10months |
| Payment Terms: | T/T |
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Detail Information |
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| Usage: | For 6 8 12inch SiC Single Crystal Growth Furnace | Dimensions (L × W × H): | Dimensions (L × W × H) Or Customise |
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| Crucible Diameter: | 900 Mm | Leakage Rate: | ≤5 Pa/12h (bake-out) |
| Rotation Speed: | 0.5–5 Rpm | Maximum Furnace Temperature: | 2500°C |
| Highlight: | Crystal Growth Furnace,12 inch Crystal Growth Furnace |
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Product Description
SiC Single crystal resistance heating crystal growth furnace for 6inch 8inch 12inch SiC wafers manufacture
SiC single crystal growth furnace's abstract
ZMSH is proud to offer the SiC single crystal growth furnace, a state-of-the-art solution for high-quality SiC wafer manufacturing. Our furnace is designed to efficiently grow SiC single crystals in sizes of 6-inch, 8-inch, and 12-inch, meeting the growing demands in industries such as electric vehicles (EVs), renewable energy, and high-power electronics.
SiC single crystal growth furnace's properties
- Advanced Resistance Heating Technology: The SiC single crystal growth furnace utilizes cutting-edge resistance heating technology, ensuring uniform temperature distribution and high-quality crystal growth.
- Temperature Control Accuracy: Achieves precise temperature regulation with a tolerance of ±1°C across the crystal growth process.
- Versatile Applications: Capable of growing SiC crystals for wafers up to 12 inches, enabling the production of larger, high-performance wafers for next-gen power devices.
- Vacuum and Pressure Management: The furnace is equipped with an advanced vacuum and pressure control system, maintaining optimal conditions for crystal growth, reducing defect rates, and improving yield.
No. Specification Details 1 Model PVT-RS-40 2 Dimensions (L × W × H) 2500 × 2400 × 3456 mm 3 Crucible Diameter 900 mm 4 Ultimate Vacuum Pressure 6 × 10⁻⁴ Pa (after 1.5h of vacuum) 5 Leakage Rate ≤5 Pa/12h (bake-out) 6 Rotation Shaft Diameter 50 mm 7 Rotation Speed 0.5–5 rpm 8 Heating Method Electric resistance heating 9 Maximum Furnace Temperature 2500°C 10 Heating Power 40 kW × 2 × 20 kW 11 Temperature Measurement Dual-color infrared pyrometer 12 Temperature Range 900–3000°C 13 Temperature Accuracy ±1°C 14 Pressure Range 1–700 mbar 15 Pressure Control Accuracy 1–10 mbar: ±0.5% F.S;
10–100 mbar: ±0.5% F.S;
100–700 mbar: ±0.5% F.S16 Operation Type Bottom loading, manual/automatic safety options 17 Optional Features Dual temperature measurement, multiple heating zones
SiC single crystal growth furnace's result
Perfect Crystal Growth
The core strength of our SiC single crystal growth furnace lies in its ability to produce high-quality, defect-free SiC crystals. With precise temperature control, advanced vacuum management, and state-of-the-art resistance heating technology, we ensure that each crystal grown is flawless, with minimal defect density. This perfection is essential for meeting the rigorous demands of semiconductor applications where even the slightest imperfection can affect the performance of the final device.
Meeting Semiconductor Standards
The SiC wafers grown in our furnace exceed industry standards for both performance and reliability. The crystal structures exhibit exceptional uniformity, with low dislocation densities and high electrical conductivity, making them ideal for high-power, high-frequency semiconductor devices. These qualities are critical for the next-generation power devices, including those used in electric vehicles (EVs), renewable energy systems, and telecommunication equipment.
ZMSH survice
ZMSH: Customizable SiC Single Crystal Growth Furnace with Full Support
At ZMSH, we provide advanced SiC single crystal growth furnaces tailored to meet your specific needs. Our customization options ensure the furnace is perfectly suited for your production requirements, helping you achieve high-quality SiC crystals.
On-Site Installation & Setup
Our team will handle on-site installation, ensuring the furnace is integrated and running efficiently at your facility. We prioritize smooth setup to minimize downtime and optimize your production process.
Comprehensive Customer Training
We offer thorough customer training, covering furnace operation, maintenance, and troubleshooting. Our goal is to equip your team with the knowledge to operate the furnace effectively and achieve optimal crystal growth.
After-Sales Maintenance
ZMSH provides reliable after-sales support, including maintenance and repair services to ensure your furnace remains in top condition. Our team is always available to minimize downtime and support your continued success.
Q&A
Q；What is the crystal growth of silicon carbide?
A:Silicon carbide (SiC) crystal growth involves the process of creating high-quality SiC crystals through methods like Czochralski or Physical Vapor Transport (PVT), essential for power semiconductor devices.
Key wods:SiC Single Crystal Growth Furnace SiC Crystals Semiconductor DevicesCrystal Growth Technology