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Sapphire crystal growth furnace 80-400kg by the Kyropoulos method(KY)
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMSH |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
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| Delivery Time: | 6-8months |
| Payment Terms: | T/T |
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Detail Information |
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| Crystal Size Range: | Diameter: 10–500mm, Thickness: 50–300mm | Growth Rate: | 0.1–5 Mm/h |
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| Melting Temperature: | 2000–2200°C | Gas System: | Ar/H₂ Gas Mixture |
| Vacuum Level: | ≤1×10⁻⁶ Pa | Dimensions: | Approx. 1200×800×1500mm |
| Highlight: | Sapphire crystal growth machine,KY Sapphire crystal growth machine |
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Product Description
Product Overview: Redefining Sapphire Crystal Growth
Sapphire (Al₂O₃), known as nature’s hardest transparent material, is critical in semiconductors, optics, and consumer electronics. Traditional Czochralski (CZ) methods struggle with high thermal stress and crystal defects, limiting their application in high-end markets. The KY Series Sapphire Growth Machine employs the Kyropoulos Method, integrating AI-powered thermal control and modular design to achieve zero dislocations and ultra-low defect density in large-scale single-crystal sapphire production. This technology empowers customers to lead the next wave of photonics and advanced materials innovation.
Core Technological Breakthroughs
- Precision Thermal Field Control: Dynamic feedback algorithms ensure furnace temperature fluctuations ≤ ±0.5°C, drastically reducing internal stresses.
- Contactless Pulling: Seed crystals remain free from mechanical contamination, achieving industry-leading crystal integrity.
- Flexible Production Scalability: Supports growth from lab-scale (10mm) to industrial-scale (500mm+) sapphire crystals.
Technical Specifications & Differentiators
|
Component |
Technical Specifications |
| Crystal Growth | Diameter: 10–500mm, Thickness: 50–300mm (adjustable), Growth Rate: 0.1–5mm/h (continuously variable) |
| Melting Furnace | Quartz crucible, Max Temperature: ≥2200°C; Power: 100-200kW (PID-based precise control) |
| Gas System | Ar/H₂ mixture control (±1% flow accuracy); Ultra-high vacuum ≤1×10⁻⁶ Pa (ULV-grade environment) |
| Intelligent Monitoring | Real-time data acquisition for temperature, pressure, and crystal morphology; AI defect prediction model (response time <3 seconds) |
Key Advantages:
- Energy Efficiency: 25% lower power consumption vs. conventional systems, reducing operational costs.
- Future-Proof Design: Modular architecture supports upgrades to 8-inch wafer production lines.
Material Performance & Quality Assurance
Superior Material Properties
- Optical Excellence: Full-spectrum transmission (>92% @ 190–3500nm) for AR/VR lenses, laser windows, and optical sensors.
- Thermal Management: Thermal conductivity of 15 W/m·K and coefficient of thermal expansion (CTE) of 5.7×10⁻⁶/°C for extreme-temperature stability.
- Mechanical Robustness: Vickers hardness of 2000kgf/mm² and flexural strength >4000MPa, withstands vibration and mechanical shock.
Stringent Quality Control
- In-Situ Inspection: Integrated X-ray tomography and laser scattering for real-time defect analysis.
- Certifications: ISO 9001 (quality management), IEC 60529 (IP protection), RoHS compliance.
ZMSH KY Sapphire Crystal Growth furnance at Customer's Factory
Frequently Asked Questions (FAQ)
Q: Does the equipment support doping processes?
A: Yes. Fe²⁺/Ti⁴⁺ doping is available for LED phosphor sapphire substrings (luminous efficiency improved by 20%).
Q: What is the footprint of the machine?
A: Standard model occupies 12~15㎡ , compatible with cleanroom deployment.
Q: How to manage maintenance costs?
A: Preventive maintenance plans reduce annual costs by 40%, including predictive analytics and spare parts reserves.