| Brand Name: | ZMSH |
| MOQ: | 1 |
| Payment Terms: | T/T |
Sapphire Crystal Growth furnance KY Kyropoulos method 90-400kg for sapphire manufacture
KY Sapphire Crystal Growth furnance's abstract
This Sapphire Crystal Growth furnance system is designed for the production of high-quality sapphire crystals with a weight range of 90-400 kg, primarily utilized in LED substrates, smartphone screens, and smartphone camera lenses. The process is highly automated and incorporates adaptive software for optimal performance. It employs resistive heating in a vacuum atmosphere with a residual pressure of 2 × 10⁻⁶ Torr. The system requires a space of 10 square meters and operates at a power range of 40-100 kW. Sapphire Crystal Growth furnance the technological stages include loading the crucible, pumping out the working volume to 6 × 10⁻⁵ Torr, heating raw materials to 2100°C for melting, seeding the crystal, and gradually decreasing the power at a controlled rate. The equipment’s capacity to produce large, high-quality sapphire crystals makes it ideal for various industrial applications in optoelectronics and consumer electronics.
ZMSH KY Sapphire Crystal Growth furnance's Growth Process![]()
Raw Material Preparation:
High-purity alumina (Al₂O₃) is used, with optional additives like lithium or sodium.
Loading the Crucible:
Raw materials are placed into a crucible made of high-temperature resistant material.
Heating:
The crucible is heated to around 2050°C, melting the alumina into a liquid.
Seeding:
A sapphire seed crystal is inserted into the molten alumina to guide crystal growth.
Crystal Growth:
The molten alumina slowly cools, allowing the sapphire crystal to grow from the seed.
Cooling:
The system gradually cools to solidify the crystal, with controlled cooling rates to prevent defects.
Crystal Removal:
The sapphire crystal is extracted and further processed.
Post-Growth Treatment:
The crystal is polished and tested for quality to meet application standards.
ZMSH KY Sapphire Crystal Growth furnance's data sheet(partly)
| Specification | Details |
| Sapphire crystals weight (kg) | 90-300 |
| High automation of the process | Yes |
| Special adaptive software | Yes |
| Heating type | Resistive heating |
| Working atmosphere | Vacuum |
| Vacuum (Torr) | 2 × 10⁻⁶ |
| Area required (sq. m) | 10 |
| Weight (kg) | 2300 |
| Power (kW) | 40 - 100 |
| Technological stages | 1. Loading crucible |
| 2. Pumping out working volume to 6 × 10⁻⁵ Torr residual pressure | |
| 3. Heating raw materials to 2100°C and melting | |
| 4. Seeding | |
| 5. Decreasing power at a given speed | |
| Sapphire crystal applications | LED substrate |
| Smartphones screens | |
| Smartphone camera lenses |
ZMSH KY Sapphire Crystal Growth furnance at Customer's Factory
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Crystal Growth Quality of ZMSH KY Sapphire Crystal Growth Furnace
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The ZMSH KY Sapphire Crystal Growth Furnace is designed to optimize the quality of sapphire crystals through precise process control, advanced thermal field design, and high-purity material selection. The following are the key advantages of the sapphire crystals produced using this furnace:
Q&A
✅ High purity with minimal impurities
✅ Excellent optical transparency in UV, visible, and IR ranges
✅ Low dislocation density for semiconductor applications
✅ Large and uniform crystal size
✅ High mechanical strength and scratch resistance
✅ Optimized stress control to reduce cracks