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SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm

SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm

Products - Silicon Carbide Wafer
  • High Light

    6mm SIC Wafer

    ,

    4H-N Type SIC Silicon Carbide

    ,

    MOS Device Silicon Carbide Wafer

  • Material
    SiC Single Crystal 4h-N
  • Grade
    Production Grade
  • Thicnkss
    0.4mm
  • Suraface
    Lapped
  • Application
    For Polish Test
  • Diameter
    2inch
  • Color
    Green
  • MPD
    <2cm-2
  • Place of Origin
    CHINA
  • Brand Name
    ZMKJ
  • Model Number
    2inch SiC wafers
  • Minimum Order Quantity
    25pcs
  • Price
    by case
  • Packaging Details
    single wafer package in 100-grade cleaning room
  • Delivery Time
    2-4weeks
  • Payment Terms
    T/T, Western Union, MoneyGram
  • Supply Ability
    5000pcs/month

SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm

  • SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm
  • SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm
  • SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm
  • SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm
  • SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm
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2inch 4/6inch dia50.6mm sic seed wafer 1mm thickness for ingot growth

Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafers production 4inch grade 4H-N 1.5mm SIC Wafers for seed crystal

6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic

 

Regarding Silicon Carbide(SiC) Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

 SiC Application

  • 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
  • diodes, IGBT, MOSFET
  • 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
2inch diameter silicon Carbide(SiC) Substrate Speicfication
Grade
Zero MPD Grade
Production Grade
Research Grade
Dummy Grade
Diameter
50.6mm±0.2mm
Thickness
1000±25um Or other customized thickness
Wafer Orientation
Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density
≤0 cm-2
≤2 cm-2
≤5 cm-2
≤30 cm-2
Resistivity 4H-N
0.015~0.028 Ω•cm
Resistivity 4/6H-SI
≥1E7 Ω·cm
Primary Flat
{10-10}±5.0° or round shape
Primary Flat Length
18.5 mm±2.0 mm or round shape
Secondary Flat Length
10.0mm±2.0 mm
Secondary Flat Orientation
Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion
1 mm
TTV/Bow /Warp
≤10μm /≤10μm /≤15μm
Roughness
Polish Ra≤1 nm / CMP Ra≤0.5 nm
Cracks by high intensity light
None
1 allowed, ≤2 mm
Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light
Cumulative area ≤1%
Cumulative area ≤1%
Cumulative area ≤3%
Polytype Areas by high intensity light
None
Cumulative area ≤2%
Cumulative area ≤5%
Scratches by high intensity light
3 scratches to 1×wafer diameter cumulative length
5 scratches to 1×wafer diameter cumulative length
5 scratches to 1×wafer diameter cumulative length
edge chip
None
3 allowed, ≤0.5 mm each
5 allowed, ≤1 mm each

Product Display

SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm 0SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm 1

SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm 2
 
 
 
 
 
 
 
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SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm 5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SiC ApplicationCatalohue Common Size In our Stock

4H-N Type / High Purity SiC wafer/ingots

2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

4H Semi-insulating / High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
 
 
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
 
Customzied size for 2-6inch
 


We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

Q: What's the way of shipping and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express account, it's great.
Q: How to pay?
(1) T/T, PayPal, West Union, MoneyGram and
Assurance payment on Alibaba and etc..
(2) Bank Fee: West Union≤USD1000.00),
T/T -: over 1000usd ,please by t/t
Q: What's the deliver time?
(1) For inventory: the delivery time is 5 workdays.
(2) For customized products: the delivery time is 7 to 25 workdays. According to the quantity.
Q: Can I customize the products based on my need?
Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.

Tags:

silicon carbide substrate

sic wafer

silicon on sapphire wafers

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