SHANGHAI FAMOUS TRADE CO.,LTD 86--15801942596 Eric-wang@sapphire-substrate.com
Free Standing GaN Substrates HVPE GaN Wafers Powder device

Free Standing GaN Substrates HVPE GaN Wafers Powder device

  • High Light

    Free Standing Gallium Nitride Substrate

    ,

    HVPE GaN Epi Wafer

    ,

    Gallium Arsenide Wafer Powder Device

  • Material
    GaN Single Crystal
  • Size
    2INCH 4inch
  • Thickness
    0.4mm
  • Type
    N-type/Un-doped Si-doped Semi-type
  • Application
    Semiconductor Device
  • Application
    Powder Device
  • Surface
    SSP
  • Package
    Single Wafer Container Box
  • Place of Origin
    CHINA
  • Brand Name
    zmkj
  • Model Number
    GaN-FS-C-U-C50-SSP
  • Minimum Order Quantity
    1pcs
  • Price
    1000~3000usd/pc
  • Packaging Details
    single wafer case by vacuum package
  • Delivery Time
    1-5weeks
  • Payment Terms
    T/T
  • Supply Ability
    50pcs per month

Free Standing GaN Substrates HVPE GaN Wafers Powder device

2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane)

4inch 2inch free-standing GaN substrates HVPE GaN Wafers

 

GaN Wafer Characteristic

  1. III-Nitride(GaN,AlN,InN)

Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is

a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.

 

Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.

 

Application

GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.

  • Laser Projection Display, Power Device, etc.       Date storage
  • Energy-efficient lighting                                        Full color fla display
  • Laser Projecttions                                                 High- Efficiency Electronic devices
  • High- Frequency Microwave Devices                   High-energy Detection and imagine
  • New energy solor hydrogen technology               Environment Detection and biological medicine
  • Light source terahertz band

 

                             Specification for free-standing GaN wafers  

Size 2" 4"
Diameter 50.8 mm 士 0.3 mm 100.0 mm 士 0.3 mm
Thickness 400 um 士 30 um 450 um 士 30 um
Orientation (0001) Ga-face c-plane (standard); (000-1) N-face (optional)
002 XRD Rocking Curve FWHM < 100 arcsec
102 XRD Rocking Curve FWHM < 100 arcsec
Lattice Radius of Curvature > 10 m (measured at 80% x diameter)
Offcut Toward m-plane 0.5° ± 0.15° toward [10-10] @ wafer center
Offcut Toward Orthogonal a-plane 0.0° ± 0.15° toward [1-210] @ wafer center
Offcut In-Plane Direction The c-plane vector projection points toward the major OF
Major Orientation Flat Plane (10-10) m-plane  2° (standard); ±0.1° (optional)
Major Orientation Flat Length 16.0 mm ±1 mm 32.0 mm ± 1 mm
Minor Orientation Flat Orientation Ga-face = major OF on bottom and minor OF on left
Minor Orientation Flat Length 8.0 mm ± 1 mm 18.0 mm ± 1 mm
Edge Bevel beveled
TTV (5 mm edge exclusion) < 15 um < 30 um
Warp (5 mm edge exclusion) < 20 um < 80 um
Bow (5 mm edge exclusion) -10 um to +5 um -40 um to +20 um
Front Side Roughness (Sa) < 0.3 nm (AFM: 10 um x 10 um area)
< 1.5 nm (WLI: 239 um x 318 um area)
Back Side Surface Finish polished (standard); etch (optional)
Back Side Roughness (Sa) polished: < 3 nm (WLI: 239 um x 318 um area)
etched: 1 um ± 0.5 um (WLI: 239 um x 318 um area)
Laser Mark back side on major flat
 
Electrical Properties Doping Resistivity
N-type ⑸ licon) < 0.02 ohm-cm
UID < 0.2 ohm-cm
Semi-Insulating (Carbon) > 1E8 ohm-cm
 
Pits Grading System Density (pits/cm2) 2" (pits) 4" (pits)
Production < 0.5 < 10 < 40
Research < 1.5 < 30 < 120
Dummy < 2.5 < 50 < 200

 

Free Standing GaN Substrates HVPE GaN Wafers Powder device 0

Free Standing GaN Substrates HVPE GaN Wafers Powder device 1Free Standing GaN Substrates HVPE GaN Wafers Powder device 2

ABOUT  OUR OEM  Factory

Free Standing GaN Substrates HVPE GaN Wafers Powder device 3

 

Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.

-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.

Q: How to pay?
100%T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-10pcs.
It depends on quantity and technics.

Q: Do you have inspection report for material?
We can supply ROHS report and reach reports for our products.