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High Light
Dia 200mm Si Epi Wafer
,6 Inch Si Epi Wafer
,AlGaN Gallium Arsenide Wafer
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MaterialGaN Layer On SI Substrate
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Size8inch/6inch
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GaN Thickness2-5um
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TypeN-type
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ApplicationSemiconductor Device
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Place of OriginCHINA
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Brand Namezmkj
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Model Number8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer
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Minimum Order Quantity1pcs
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Price1200~2500usd/pc
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Packaging Detailssingle wafer case by vacuum package
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Delivery Time1-5weeks
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Payment TermsT/T
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Supply Ability50pcs per month
Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch
8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer GaN-on-Si Epiwafer for Micro-LED for RF application
GaN Wafer Characteristic
- III-Nitride(GaN,AlN,InN)
Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is
a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.
For Power Application
Product specification
| Items | Values/Scope |
| Substrate | Si |
| Wafer diameter | 4” / 6” / 8” |
| Epi-layer thickness | 4-5 μm |
| Wafer bow | <30 μm, Typical |
| Surface Morphology | RMS<0.5nm in 5×5 μm² |
| Barrier | AlXGa1-XN, 0<X<1 |
| Cap layer | In-situ SiN or GaN (D-mode); p-GaN (E-mode) |
| 2DEG density | >9E12/cm2 (20nm Al0.25GaN) |
| Electron mobility | >1800 cm2/Vs (20nm Al0.25GaN) |
For RF Application
Prodcut Specification
| Items | Values/Scope |
| Substrate | HR_Si / SiC |
| Wafer diameter | 4’’/6’’ for SiC, 4”/ 6”/ 8” for HR_Si |
| Epi-layer thickness | 2-3 μm |
| Wafer bow | <30 μm, Typical |
| Surface Morphology | RMS<0.5nm in 5×5 μm² |
| Barrier | AlGaN or AlN or InAlN |
| Cap layer | In-situ SiN or GaN |
For LED Application
| Items | GaN-on-Si | GaN-on-Sapphire |
| 4”/ 6”/ 8” | 2”/ 4”/ 6” | |
| Epi-layer Thickness | <4 μm | <7 μm |
| Average Dominant/ Peak Wavelength | 400-420nm, 440-460nm, 510-530nm | 270-280nm, 440-460nm, 510-530nm |
| FWHM |
<20nm for Blue/Near-UV <40nm for Green |
<15nm for UVC <25nm for Blue <40nm for Green |
| Wafer Bow | <50 μm | <180 μm |
ABOUT OUR OEM Factory
Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.
-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg
Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.
Q: How to pay?
100％T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.
Our products are sold all over the world, you can rest assured.