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Gallium Nitride Wafer

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

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Superconducting Thin Monocrystalline Substrate

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Eric-wang@sapphire-substrate.com

+8615801942596

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Superconducting Thin Monocrystalline Substrate

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

Brand Name:	zmkj
Model Number:	8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer
MOQ:	1pcs
Price:	1200~2500usd/pc
Packaging Details:	single wafer case by vacuum package
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

CHINA

Material:

GaN Layer On SI Substrate

Size:

8inch/6inch

GaN Thickness:

2-5um

Type:

N-type

Application:

Semiconductor Device

Supply Ability:

50pcs per month

Highlight:

Dia 200mm Si Epi Wafer

6 Inch Si Epi Wafer

AlGaN Gallium Arsenide Wafer

Product Description

8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer GaN-on-Si Epiwafer for Micro-LED for RF application

GaN Wafer Characteristic

III-Nitride(GaN,AlN,InN)

Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is

a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.

For Power Application

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch 0

Product specification

Items	Values/Scope
Substrate	Si
Wafer diameter	4” / 6” / 8”
Epi-layer thickness	4-5 μm
Wafer bow	<30 μm, Typical
Surface Morphology	RMS<0.5nm in 5×5 μm²
Barrier	AlXGa1-XN, 0<X<1
Cap layer	In-situ SiN or GaN (D-mode); p-GaN (E-mode)
2DEG density	>9E12/cm2 (20nm Al0.25GaN)
Electron mobility	>1800 cm2/Vs (20nm Al0.25GaN)

For RF Application

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch 1

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch 2

Prodcut Specification

Items	Values/Scope
Substrate	HR_Si / SiC
Wafer diameter	4’’/6’’ for SiC, 4”/ 6”/ 8” for HR_Si
Epi-layer thickness	2-3 μm
Wafer bow	<30 μm, Typical
Surface Morphology	RMS<0.5nm in 5×5 μm²
Barrier	AlGaN or AlN or InAlN
Cap layer	In-situ SiN or GaN

For LED Application

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch 3

ABOUT OUR OEM Factory

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch 4

Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.

-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.

Q: How to pay?
100％T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.

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products details

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Gallium Nitride Wafer

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Gallium Nitride Wafer

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

Dia 200mm Si Epi Wafer

6 Inch Si Epi Wafer

AlGaN Gallium Arsenide Wafer