• Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch
  • Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch
Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

Product Details:

Place of Origin: CHINA
Brand Name: zmkj
Model Number: 8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer

Payment & Shipping Terms:

Minimum Order Quantity: 1pcs
Price: 1200~2500usd/pc
Packaging Details: single wafer case by vacuum package
Delivery Time: 1-5weeks
Payment Terms: T/T
Supply Ability: 50pcs per month
Get Best Price Contact Now

Detail Information

Material: GaN Layer On SI Substrate Size: 8inch/6inch
GaN Thickness: 2-5um Type: N-type
Application: Semiconductor Device
High Light:

Dia 200mm Si Epi Wafer

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6 Inch Si Epi Wafer

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AlGaN Gallium Arsenide Wafer

Product Description

 

8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer GaN-on-Si Epiwafer for Micro-LED  for RF application 

 

GaN Wafer Characteristic

  1. III-Nitride(GaN,AlN,InN)

Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is

a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.

 

 

For Power Application

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch 0

Product specification 

Items Values/Scope
Substrate Si
Wafer diameter 4” / 6” / 8
Epi-layer thickness 4-5 μm
Wafer bow <30 μm, Typical
Surface Morphology RMS<0.5nm in 5×5 μm²
Barrier AlXGa1-XN, 0<X<1
Cap layer In-situ SiN or GaN (D-mode); p-GaN (E-mode)
2DEG density >9E12/cm2 (20nm Al0.25GaN)
Electron mobility >1800 cm2/Vs (20nm Al0.25GaN)

 

For RF Application

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch 1

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch 2

Prodcut Specification 

Items Values/Scope
Substrate HR_Si / SiC
Wafer diameter 4’’/6’’ for SiC, 4”/ 6”/ 8” for HR_Si
Epi-layer thickness 2-3 μm
Wafer bow <30 μm, Typical
Surface Morphology RMS<0.5nm in 5×5 μm²
Barrier AlGaN or AlN or InAlN
Cap layer In-situ SiN or GaN

 

 

For LED Application

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch 3

 

 

ABOUT  OUR OEM  Factory

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch 4

 

Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.

-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.

Q: How to pay?
100%T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.

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