2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices

Basic Information
Place of Origin: China
Brand Name: ZMKJ
Model Number: 2inch AlN-sapphire
Minimum Order Quantity: 5pcs
Price: by case
Packaging Details: single wafer container in cleaning room
Delivery Time: in 30days
Payment Terms: T/T, Western Union, paypal
Supply Ability: 50pcs/month
Substrate: Sapphire Wafer Layer: AlN Template
Layer Thickness: 1-5um Conductivity Type: N/P
Orientation: 0001 Application: High Power/high Frequency Electronic Devices
Application 2: 5G Saw/BAW Devices Silicon Thickness: 525um/625um/725um
High Light:

2 inch AlN Template

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5G BAW Devices AlN Template

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2 inch sapphire substrate

2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate

2inch on sapphire substrate AlN Template layer Wafer For 5G BAW Devices

 

Applications of   AlN template
 
  Our OEM has developed a serials of proprietary technologies and the-state-of-the  art PVT growth reactors and facilities to
fabricate different sizes of high-quality single crystalline AlN wafers, AlN temlpates. We are one of the few world-leading
high-tech companies who own full AlN fabrication capabilities to produce high-quality AlN boules and wafers, and provide
professional services and turn-key solutions to our customers,arranged from the growth reactor and hotzone design,
modeling and simulation, process design and optimization, crystal growth,
wafering and material characterization. Up to April 2019, they have applied more than 27 patents  (including PCT).
 
                             Specification 
Ch2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices 0aracteristic Specification

 

Other relaterd  4INCH  GaN Template Specification 

 

  GaN/ Al₂O₃ Substrates (4") 4inch 
Item  Un-doped N-type

High-doped

N-type

Size  (mm) Φ100.0±0.5 (4")
Substrate Structure GaN on Sapphire(0001)
SurfaceFinished  (Standard: SSP Option: DSP)
Thickness (μm) 4.5±0.5; 20±2;Customized
Conduction Type  Un-doped N-type High-doped N-type
Resistivity  (Ω·cm)(300K) ≤0.5 ≤0.05 ≤0.01
GaN Thickness Uniformity
 
≤±10% (4")
Dislocation Density (cm-2)
 
≤5×108
Useable Surface Area >90%
Package  Packaged in a class 100 clean room environment.
 

 

2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices 12 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices 2

Crystal structure

Wurtzite

Lattice constant (Å) a=3.112, c=4.982
Conduction band type Direct bandgap
Density (g/cm3) 3.23
Surface microhardness (Knoop test) 800
Melting point (℃) 2750 (10-100 bar in N2)
Thermal conductivity (W/m·K) 320
Band gap energy (eV) 6.28
Electron mobility (V·s/cm2) 1100
Electric breakdown field (MV/cm) 11.7

2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices 32 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices 4

 

Contact Details
Manager

Phone Number : +8615801942596

WhatsApp : +8615801942596