Brand Name:	ZMKJ
Model Number:	2inch AlN-sapphire
MOQ:	5pcs
Price:	by case
Packaging Details:	single wafer container in cleaning room
Payment Terms:	T/T, Western Union, paypal

Detail Information

Place of Origin:

China

Substrate:

Sapphire Wafer

Layer:

AlN Template

Layer Thickness:

1-5um

Conductivity Type:

N/P

Orientation:

0001

Application:

High Power/high Frequency Electronic Devices

Application 2:

5G Saw/BAW Devices

Silicon Thickness:

525um/625um/725um

Supply Ability:

50pcs/month

Highlight:

2 inch AlN Template

5G BAW Devices AlN Template

Product Description

2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate

2inch on sapphire substrate AlN Template layer Wafer For 5G BAW Devices

Applications of AlN template

Our OEM has developed a serials of proprietary technologies and the-state-of-the art PVT growth reactors and facilities to

fabricate different sizes of high-quality single crystalline AlN wafers, AlN temlpates. We are one of the few world-leading

high-tech companies who own full AlN fabrication capabilities to produce high-quality AlN boules and wafers, and provide

professional services and turn-key solutions to our customers,arranged from the growth reactor and hotzone design,

modeling and simulation, process design and optimization, crystal growth,

wafering and material characterization. Up to April 2019, they have applied more than 27 patents (including PCT).

Specification

aracteristic Specification

Other relaterd 4INCH GaN Template Specification

	GaN/ Al₂O₃ Substrates (4") 4inch
Item	Un-doped	N-type	High-doped N-type
Size (mm)	Φ100.0±0.5 (4")
Substrate Structure	GaN on Sapphire(0001)
SurfaceFinished	(Standard: SSP Option: DSP)
Thickness (μm)	4.5±0.5; 20±2;Customized
Conduction Type	Un-doped	N-type	High-doped N-type
Resistivity (Ω·cm)(300K)	≤0.5	≤0.05	≤0.01
GaN Thickness Uniformity	≤±10% (4")
Dislocation Density (cm-2)	≤5×108
Useable Surface Area	＞90%
Package	Packaged in a class 100 clean room environment.

2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices 1

Crystal structure	Wurtzite
Lattice constant (Å)	a=3.112, c=4.982
Conduction band type	Direct bandgap
Density (g/cm3)	3.23
Surface microhardness (Knoop test)	800
Melting point (℃)	2750 (10-100 bar in N2)
Thermal conductivity (W/m·K)	320
Band gap energy (eV)	6.28
Electron mobility (V·s/cm2)	1100
Electric breakdown field (MV/cm)	11.7

2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices 3

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