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BAW Devices Dia 50.8mm 1 Inch AlN Aluminum Nitride Wafer
Product Details:
| Place of Origin: | China |
| Brand Name: | ZMKJ |
| Model Number: | UTI-AlN-1inch single crystal |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1pcs |
|---|---|
| Price: | by case |
| Packaging Details: | single wafer container in cleaning room |
| Delivery Time: | in 30days |
| Payment Terms: | T/T, Western Union, paypal |
| Supply Ability: | 10pcs/month |
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Detail Information |
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| Material: | AlN Crystal | Thickness: | 400um |
|---|---|---|---|
| Orientation: | 0001 | Application: | High Power/high Frequency Electronic Devices |
| Application 2: | 5G Saw/BAW Devices | Ra: | 0.5nm |
| Surface Polished: | Al Face Cmp, N-face Mp | Crystal Type: | 2H |
| High Light: | AlN aluminum nitride wafer,50.8mm aluminum nitride wafer,BAW Devices AlN wafer |
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Product Description
dia50.8mm 2inch 1inch AlN substrate/AlN single crystal wafers
10x10mm or diameter 10mm dia25.4mm dia30mm, dia45mm, dia50.8mm AlN substrate AlN single crystal wafers
Applications of AlN template
we have developed a serials of proprietary processes and technologies to fabricate
high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN
templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive
market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc
We currently provide customers with standardized 10x10mm/Φ10mm/Φ15mm/Φ20mm/Φ25.4mm/Φ30mm/Φ50.8mm high quality nitrogen
Aluminum single crystal substrate products, and can also provide customers with 10-20mm non-polar
M-plane aluminum nitride single crystal substrate, or customize non-standard 5mm-50.8mm to customers
Polished aluminum nitride single crystal substrate. This product is widely used as a high-end substrate material
Used in UVC-LED chips, UV detectors, UV lasers, and various high power
/High temperature/high frequency electronic device field.
Aluminum single crystal substrate products, and can also provide customers with 10-20mm non-polar
M-plane aluminum nitride single crystal substrate, or customize non-standard 5mm-50.8mm to customers
Polished aluminum nitride single crystal substrate. This product is widely used as a high-end substrate material
Used in UVC-LED chips, UV detectors, UV lasers, and various high power
/High temperature/high frequency electronic device field.
Characteristic Specification
- Model UTI-AlN-10x10B-single crystal
- Diameter 10x10±0.5mm ； or dia10mm, dia25.4mm, or dia30mm, or dia45mm;
- Substrate thickness (µm) 400 ± 50
- Orientation C-axis [0001] +/- 0.5°
Quality Grade S-grade(super) P-grade(production) R-grade(Research)
- Cracks None None <3mm
- FWHM-2θXRD@(0002) <150 <300 <500
- FWHM-HRXRD@(10-12) <100 <200 <400
- Surface Roughness [5×5µm] (nm) Al-face CMP <0.5nm; N-face(back surface) MP <1.2um;
- Usable area 90%
- Absorbance <50 ； <70 ； <100；
- 1st OF length orientation {10-10} ±5°；
- TTV (µm) ≤30
- Bow (µm) ≤30
- Warp (µm) -30~30
- Note: These characterization results may vary slightly depending on the equipments and/or software employed
impurity element C O Si B Na W P S Ti Fe
PPMW 27 90 5.4 0.92 0.23 <0.1 <0.1 <0.5 0.46 <0.5
| Crystal structure |
Wurtzite |
| Lattice constant (Å) | a=3.112, c=4.982 |
| Conduction band type | Direct bandgap |
| Density (g/cm3) | 3.23 |
| Surface microhardness (Knoop test) | 800 |
| Melting point (℃) | 2750 (10-100 bar in N2) |
| Thermal conductivity (W/m·K) | 320 |
| Band gap energy (eV) | 6.28 |
| Electron mobility (V·s/cm2) | 1100 |
| Electric breakdown field (MV/cm) | 11.7 |
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