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30mm Dia AlN Single Crystal Semiconductor Substrate

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Superconducting Thin Monocrystalline Substrate

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Superconducting Thin Monocrystalline Substrate

30mm Dia AlN Single Crystal Semiconductor Substrate

Brand Name:	ZMKJ
Model Number:	UTI-AlN-150
MOQ:	3pcs
Price:	by case
Packaging Details:	single wafer container in cleaning room
Payment Terms:	T/T, Western Union, paypal

Detail Information

Product Description

Detail Information

Place of Origin:

China

Substrate:

Silicon Wafer

Layer:

AlN Template

Layer Thickness:

200-1000nm

Conductivity Type:

N/P

Orientation:

0001

Application:

High Power/high Frequency Electronic Devices

Application 2:

5G Saw/BAW Devices

Silicon Thickness:

525um/625um/725um

Supply Ability:

50pcs/month

Highlight:

AlN Semiconductor Substrate

30mm dia aln Substrate

30mm aln single crystal

Product Description

diameter 150mm 8inch 4inch 6inch Silicon-based AlN templates 500nm AlN film on silicon substrate

Applications of AlN template

Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future

electronic devices. As a typical kind of 3rd/4th-generation semiconductor material, aluminum nitride (AlN) has

superior physical and chemical properties such as wide bandgap, high thermal conductivity, high breakdown filed,

high electronic mobility and corrosion/radiation resistance, and is a perfect substrate for optoelectronic devices,

radio frequency (RF) devices, high-power/high-frequency electronic devices, etc.. Particularly, AlN substrate is the

best candidate for UV-LED, UV detectors, UV lasers, 5G high-power/high-frequency RF devices and 5G SAW/BAW

devices, which could widely be used in environmental protection, electronics, wireless communications, printing,

biology, healthcare, military and other fields, such as UV purification/sterilization, UV curing, photocatalysis, coun

terfeit detection, high-density storage, medical phototherapy, drug discovery, wireless and secure communication,

aerospace/deep-space detection and other fields.

we have developed a serials of proprietary processes and technologies to fabricate

high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN

templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive

market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc

We currently provide customers with standardized 10x10mm/Φ10mm/Φ15mm/Φ20mm/Φ25.4mm/Φ30mm/Φ50.8mm high quality nitrogen
Aluminum single crystal substrate products, and can also provide customers with 10-20mm non-polar
M-plane aluminum nitride single crystal substrate, or customize non-standard 5mm-50.8mm to customers
Polished aluminum nitride single crystal substrate. This product is widely used as a high-end substrate material
Used in UVC-LED chips, UV detectors, UV lasers, and various high power
/High temperature/high frequency electronic device field.

Specification

Characteristic Specification

Model UTI-AlN-030B-single crystal
Diameter Dia30±0.5mm ；
Substrate thickness (µm) 400 ± 50
Orientation C-axis [0001] +/- 0.5°

Quality Grade S-grade(super) P-grade(production) R-grade(Research)

Cracks None None <3mm
FWHM-2θXRD@(0002) <150 <300 <500
FWHM-HRXRD@(10-12) <100 <200 <400
Surface Roughness [5×5µm] (nm) Al-face <0.5nm; N-face(back surface) <1.2um;
Usable area 90%
Absorbance <50 ； <70 ； <100；
1st OF length orientation {10-10} ±5°；
TTV (µm) ≤30
Bow (µm) ≤30
Warp (µm) -30~30
Note: These characterization results may vary slightly depending on the equipments and/or software employed

30mm Dia AlN Single Crystal Semiconductor Substrate 1

30mm Dia AlN Single Crystal Semiconductor Substrate 2

30mm Dia AlN Single Crystal Semiconductor Substrate 3

30mm Dia AlN Single Crystal Semiconductor Substrate 4

impurity element C O Si B Na W P S Ti Fe

PPMW 27 90 5.4 0.92 0.23 <0.1 <0.1 <0.5 0.46 <0.5

Crystal structure	Wurtzite
Lattice constant (Å)	a=3.112, c=4.982
Conduction band type	Direct bandgap
Density (g/cm3)	3.23
Surface microhardness (Knoop test)	800
Melting point (℃)	2750 (10-100 bar in N2)
Thermal conductivity (W/m·K)	320
Band gap energy (eV)	6.28
Electron mobility (V·s/cm2)	1100
Electric breakdown field (MV/cm)	11.7

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Superconducting Thin Monocrystalline Substrate

products details

30mm Dia AlN Single Crystal Semiconductor Substrate

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Gallium Nitride Wafer

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

Sapphire Substrate

Sapphire Optical Windows

Silicon Carbide Wafer

Sapphire Tube

Gallium Nitride Wafer

Semiconductor Substrate

Synthetic Gem Stone

Ceramic Parts

Scientific Lab Equipment

Sapphire Crystal Watch Case

Wafer Carrier Box

Superconducting Thin Monocrystalline Substrate

30mm Dia AlN Single Crystal Semiconductor Substrate

AlN Semiconductor Substrate

30mm dia aln Substrate

30mm aln single crystal