SHANGHAI FAMOUS TRADE CO.,LTD 86--15801942596 Eric-wang@sapphire-substrate.com
6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices

6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices

  • High Light

    Sapphire based AlN templates

    ,

    6 Inch sapphire wafer

    ,

    6 Inch AlN templates

  • Substrate
    Sapphire Wafer
  • Layer
    AlN Template
  • Layer Thickness
    1-5um
  • Conductivity Type
    N/P
  • Orientation
    0001
  • Application
    High Power/high Frequency Electronic Devices
  • Application 2
    5G Saw/BAW Devices
  • Silicon Thickness
    525um/625um/725um
  • Place of Origin
    China
  • Brand Name
    ZMKJ
  • Model Number
    2inch AlN-sapphire
  • Minimum Order Quantity
    5pcs
  • Price
    by case
  • Packaging Details
    single wafer container in cleaning room
  • Delivery Time
    in 30days
  • Payment Terms
    T/T, Western Union, paypal
  • Supply Ability
    50pcs/month

6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices

2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate

 

Applications of   AlN template
Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future
electronic devices. As a typical kind of 3rd/4th-generation semiconductor material, aluminum nitride (AlN) has
superior physical and chemical properties such as wide bandgap, high thermal conductivity, high breakdown filed,
high electronic mobility and corrosion/radiation resistance, and is a perfect substrate for optoelectronic devices,
radio frequency (RF) devices, high-power/high-frequency electronic devices, etc.. Particularly, AlN substrate is the
best candidate for UV-LED, UV detectors, UV lasers, 5G high-power/high-frequency RF devices and 5G SAW/BAW
devices, which could widely be used in environmental protection, electronics, wireless communications, printing,
biology, healthcare, military and other fields, such as UV purification/sterilization, UV curing, photocatalysis, coun
terfeit detection, high-density storage, medical phototherapy, drug discovery, wireless and secure communication,
aerospace/deep-space detection and other fields.
we have developed a serials of proprietary processes and technologies to fabricate
high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN
templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive
market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc
 
  Our OEM has developed a serials of proprietary technologies and the-state-of-the  art PVT growth reactors and facilities to
fabricate different sizes of high-quality single crystalline AlN wafers, AlN temlpates. We are one of the few world-leading
high-tech companies who own full AlN fabrication capabilities to produce high-quality AlN boules and wafers, and provide
professional services and turn-key solutions to our customers,arranged from the growth reactor and hotzone design,
modeling and simulation, process design and optimization, crystal growth,
wafering and material characterization. Up to April 2019, they have applied more than 27 patents  (including PCT).
 
                             Specification 
Ch6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices 0aracteristic Specification

 

Other relaterd  4INCH  GaN Template Specification 

 

  GaN/ Al₂O₃ Substrates (4") 4inch 
Item  Un-doped N-type

High-doped

N-type

Size  (mm) Φ100.0±0.5 (4")
Substrate Structure GaN on Sapphire(0001)
SurfaceFinished  (Standard: SSP Option: DSP)
Thickness (μm) 4.5±0.5; 20±2;Customized
Conduction Type  Un-doped N-type High-doped N-type
Resistivity  (Ω·cm)(300K) ≤0.5 ≤0.05 ≤0.01
GaN Thickness Uniformity
 
≤±10% (4")
Dislocation Density (cm-2)
 
≤5×108
Useable Surface Area >90%
Package  Packaged in a class 100 clean room environment.
 

6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices 1

6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices 26 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices 3

Crystal structure

Wurtzite

Lattice constant (Å) a=3.112, c=4.982
Conduction band type Direct bandgap
Density (g/cm3) 3.23
Surface microhardness (Knoop test) 800
Melting point (℃) 2750 (10-100 bar in N2)
Thermal conductivity (W/m·K) 320
Band gap energy (eV) 6.28
Electron mobility (V·s/cm2) 1100
Electric breakdown field (MV/cm) 11.7

6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices 4