SHANGHAI FAMOUS TRADE CO.,LTD 86--15801942596 Eric-wang@sapphire-substrate.com
3 Inch InP Crystal Dummy Prime Semiconductor Substrate

3 Inch InP Crystal Dummy Prime Semiconductor Substrate

  • High Light

    Dummy Prime Semiconductor Substrate

    ,

    InP Crystal Semiconductor Substrate

    ,

    SSP Semiconductor Substrate

  • Material
    InP Crystal
  • Growth Method
    VFG
  • SIZE
    2inch/3inch/4 INCH
  • Thickness
    350-650um
  • Application
    LED/LD Device
  • Surface
    Ssp/dsp
  • Package
    Single Wafer Container
  • Doped
    S/Zn/Fe Or Un-doped
  • TTV
    <10um
  • BOW
    <10UM
  • Place of Origin
    CHINA
  • Brand Name
    zmkj
  • Model Number
    2 inch Inp wafers
  • Minimum Order Quantity
    3pcs
  • Price
    by case
  • Packaging Details
    single wafer container package in 100-grade cleaning room
  • Delivery Time
    2weeks
  • Payment Terms
    T/T, Western Union
  • Supply Ability
    500pcs

3 Inch InP Crystal Dummy Prime Semiconductor Substrate

2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe +

 

 

growth (modified VFG method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed.

The dopant (Fe, S, Sn or Zn)is added to the crucible along with the polycrystal. High pressure is applied inside the chamber to prevent decomposition of the Indium Phosphide.he company has developed a process to yield fully stoechiometric, high purity and low dislocation density inP single crystal.

The VFG technique improves upon the LEC method thanks to a thermal baffle technology in connection with a numerical

modeling of thermal growth conditions. tCZ is a cost-effective mature technology with high quality reproducibility from boule to boule.

 

 

Features:
1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.


2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°


3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm


4, to achieve the "open box ready to use" requirements


5, according to user requirements, special specifications product processing

 

 

Applications:
IIt has the advantages of high electronic limit drift speed, good radiation resistance and good heat conduction. Suitable for manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.

 

3 Inch InP Crystal Dummy Prime Semiconductor Substrate 0

 

 

3 Inch InP Crystal Dummy Prime Semiconductor Substrate 1

3 Inch InP Crystal Dummy Prime Semiconductor Substrate 23 Inch InP Crystal Dummy Prime Semiconductor Substrate 3

2inch S-C-N/S doped InP WAFERS

3 Inch InP Crystal Dummy Prime Semiconductor Substrate 4

 

2inch S-C-N/Fe+ doped InP WAFERS

 

3 Inch InP Crystal Dummy Prime Semiconductor Substrate 5

 

3 Inch InP Crystal Dummy Prime Semiconductor Substrate 6

---FAQ –

Q: Are you trading company or manufacturer ?

A: zmkj is a trading company but have a sapphire manufacturer 
as a supplier of semiconductor materials wafers for a wide span of applications.

Q: How long is your delivery time?

A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not

in stock,it is according to quantity.

Q: Do you provide samples ? is it free or extra ?

A: Yes, we could offer the sample for free charge but do not pay the cost of freight.

Q: What is your terms of payment ?

A: Payment<=1000USD, 100% in advance. Payment>=1000USD,
50% T/T in advance ,balance before shippment.
If you have another question, pls feel free to contact us as below: