2 Inch Sapphire Substrate Wafer A R-Axis For GaN Epitaxial Growth Customized

Special Orientation A-axis R-axis M-axis 2inch 3inch 4inch 6inch  sapphire substrates wafers 

for GaN epitaxial growth；

Sapphire is one of the hardest materials, and possesses very good transmission during the range of visible and near IR spectrum.It is widely used for led substrates for GaN Epitaxial growth ；and also as optical window in infrared and far infrared military equipments, apparatus and instruments of satellite and space technology, and navigation and spaceflight, such as night infrared scope/sight and night vision camera, etc.The sapphire crystal window is intensively applied in high-tech fields.

The Detail for 2inch A-axis wafers                        

Size: 2 inch SSP-430-A

Material: KY Sapphire Al2O3 single crystal without bubble；color ；

Orientation:A-cut,A-axis off 0.0+/-0.1°；
Diameter: 50.8 +/-0.2mm ；

Thickness:430 ± 15 um ；
OF Flat:16.0 +/- 1.0 mm ；
OF orientation: C-axis,C-axis off 0.0+/-0.1°；
Surface: SSP Epi-ready Polished ；
TTV<= 10um ；BOW<= 20um ； Warp<= 20 um ；
Front Surface Roughness (Ra) Ra <= 0.3 nm ；
Back Surface Roughness (Ra)  Ra = 1.0 +/-0.2um ；
Edge: from 1mm ；

The Inspection Date