• 6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized
  • 6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized
  • 6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized
6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized

6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized

Product Details:

Place of Origin: CHINA
Brand Name: ZMKJ
Model Number: 6inch sic

Payment & Shipping Terms:

Minimum Order Quantity: 1pcs
Price: 600-1500usd/pcs by FOB
Packaging Details: single wafer package in 100-grade cleaning room
Delivery Time: 1-6weeks
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 1-50pcs/month
Get Best Price Contact Now

Detail Information

Material: SiC Single Crystal 4H-N Type Grade: Dummy / Research /Production Grade
Thicnkss: 430um Or Customized Suraface: LP/LP
Application: Device Maker Polishing Test Diameter: 150±0.5mm
High Light:

silicon carbide substrate

,

sic wafer

Product Description

4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer

About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs

 

1. The specification                               

6 inch diameter, Silicon Carbide (SiC) Substrate Specification  
Grade Zero MPD Grade Production Grade Research Grade Dummy Grade
Diameter 150.0 mm±0.2mm
ThicknessΔ 350 μm±25μm or 500±25un
Wafer Orientation Off axis : 4.0° toward< 1120> ±0.5° for 4H-N On axis : <0001>±0.5° for 6H-SI/4H-SI
Primary Flat {10-10}±5.0°
Primary Flat Length 47.5 mm±2.5 mm
Edge exclusion 3 mm
TTV/Bow /Warp ≤15μm /≤40μm /≤60μm
Micropipe Density ≤1 cm-2 ≤5 cm-2 ≤15 cm-2 ≤100 cm-2
Resistivity 4H-N 0.015~0.028 Ω·cm
4/6H-SI ≥1E5 Ω·cm
Roughness Polish Ra≤1 nm
CMP Ra≤0.5 nm
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤2% Cumulative area ≤5%
Polytype Areas by high intensity light None Cumulative area≤2% Cumulative area≤5%
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length
Edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each
Contamination by high intensity light None

 

6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized 06 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized 1

 

About our  ZMKJ Company
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.
6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized 2
 
CATALOGUE   COMMON  SIZE                             
4H-N Type / High Purity  SiC wafer
2 inch 4H N-Type SiC wafer
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer
6 inch 4H N-Type SiC wafer

 

4H Semi-insulating /  High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
 
 
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer

 
 
 

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Sales & Customer Service               

Materials Purchasing

The materials purchasing department is responsible to gather all the raw materials needed to produce your product. Complete traceability of all products and materials, including chemical and physical analysis are always available.

Quality

During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.

 

Service

We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.

we are at your side by any time when you have problem,and resolve it in 10hours.

 

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