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6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized
Product Details:
| Place of Origin: | CHINA |
| Brand Name: | ZMKJ |
| Model Number: | 6inch sic |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1pcs |
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| Price: | 600-1500usd/pcs by FOB |
| Packaging Details: | single wafer package in 100-grade cleaning room |
| Delivery Time: | 1-6weeks |
| Payment Terms: | T/T, Western Union, MoneyGram |
| Supply Ability: | 1-50pcs/month |
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Detail Information |
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| Material: | SiC Single Crystal 4H-N Type | Grade: | Dummy / Research /Production Grade |
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| Thicnkss: | 430um Or Customized | Suraface: | LP/LP |
| Application: | Device Maker Polishing Test | Diameter: | 150±0.5mm |
| High Light: | silicon carbide substrate,sic wafer |
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Product Description
4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs
1. The specification
| 6 inch diameter, Silicon Carbide (SiC) Substrate Specification | ||||||||
| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | ||||
| Diameter | 150.0 mm±0.2mm | |||||||
| ThicknessΔ | 350 μm±25μm or 500±25un | |||||||
| Wafer Orientation | Off axis : 4.0° toward< 1120> ±0.5° for 4H-N On axis : <0001>±0.5° for 6H-SI/4H-SI | |||||||
| Primary Flat | {10-10}±5.0° | |||||||
| Primary Flat Length | 47.5 mm±2.5 mm | |||||||
| Edge exclusion | 3 mm | |||||||
| TTV/Bow /Warp | ≤15μm /≤40μm /≤60μm | |||||||
| Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤100 cm-2 | ||||
| Resistivity | 4H-N | 0.015~0.028 Ω·cm | ||||||
| 4/6H-SI | ≥1E5 Ω·cm | |||||||
| Roughness | Polish Ra≤1 nm | |||||||
| CMP Ra≤0.5 nm | ||||||||
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | |||||
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤2% | Cumulative area ≤5% | |||||
| Polytype Areas by high intensity light | None | Cumulative area≤2% | Cumulative area≤5% | |||||
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | |||||
| Edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |||||
| Contamination by high intensity light | None | |||||||
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4H-N Type / High Purity SiC wafer
2 inch 4H N-Type SiC wafer
3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer 6 inch 4H N-Type SiC wafer |
4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
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6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer |
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