Silicon Carbide Power Semiconductor Production to Upgrade from 6-inch to 8-inch Wafers

July 1, 2024

Latest company news about Silicon Carbide Power Semiconductor Production to Upgrade from 6-inch to 8-inch Wafers

Silicon Carbide Power Semiconductor Production to Upgrade from 6-inch to 8-inch Wafers


The production process for silicon carbide (SiC) power semiconductors is set to upgrade from 6-inch to 8-inch wafers. This plan aims to increase yield and productivity, providing SiC power semiconductors to the market at competitive prices. The transition will begin in the third quarter of 2025.


Enhancing Production Efficiency


Francesco Muggeri, Vice President of Power Discrete and Analog Products, shared insights in a recent interview. “Currently, the mainstream size for producing SiC power semiconductors is 6 inches, but we plan to gradually transition to 8 inches starting from the third quarter of next year,” Muggeri stated. With the increase in wafer size, each wafer can produce more chips, thereby reducing the production cost per chip. This strategic move is expected to meet the growing market demand and stabilize prices.


Global Transition Plans


The company has laid out a comprehensive plan for this transition. The shift to 8-inch wafers will start at their SiC wafer plant in Catania, Italy, in the third quarter of next year. Following this, their Singapore plant will also transition to 8-inch wafers. Additionally, a joint venture in China is expected to begin 8-inch SiC wafer production by the fourth quarter of the same year.


Market Dynamics and Future Projections


The current market scenario for SiC power semiconductors is characterized by high demand and elevated prices. However, Muggeri anticipates a stabilization in the market. “The products being sold now are based on orders from over two years ago, leading to high prices. But we expect quotes for 2027 and beyond to be 15-20% lower than current prices, indicating a certain level of price stabilization for SiC semiconductors,” he explained.


Impact on the Electric Vehicle Market


Addressing concerns about a potential slowdown in the global electric vehicle (EV) market, Muggeri remained optimistic. While growth has decelerated in some of the fastest-growing countries such as Europe, the US, and South Korea, it has not led to a significant decline in semiconductor demand. “The number of semiconductors used in automobile production has increased, and the demand for SiC power semiconductors remains strong,” Muggeri noted.


He highlighted the advantages of SiC power semiconductors in EVs, such as an 18-20% increase in driving range. “The adoption rate of SiC power semiconductors in cars is expected to rise from the current 15% to 60% in the future,” Muggeri predicted, underscoring the critical role SiC technology will play in the automotive industry's evolution.




The transition to 8-inch SiC wafers marks a significant step forward in meeting the growing demand for efficient and cost-effective power semiconductors. This strategic move is poised to enhance production capabilities and stabilize market prices, supporting the ongoing advancements in electric vehicle technology and beyond.


SiC wafers  8 inch available now (click the picture for more)


This study presents the characterization of an 8-inch 4H-N type silicon carbide (SiC) wafer intended for semiconductor applications. The wafer, with a thickness of 500±25 µm, was fabricated using state-of-the-art techniques and is doped with n-type impurities. Characterization techniques including X-ray diffraction (XRD), scanning electron microscopy (SEM), and Hall effect measurements were employed to assess the crystal quality, surface morphology, and electrical properties of the wafer. The XRD analysis confirmed the 4H polytype structure of the SiC wafer, while SEM imaging revealed a uniform and defect-free surface morphology.


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