|Material:||InP Crystal||Growth Method:||VFG|
|Package:||Single Wafer Container||Doped:||S/Zn/Fe Or Un-doped|
Dummy Prime Semiconductor Substrate,
InP Crystal Semiconductor Substrate,
SSP Semiconductor Substrate
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe +
1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.
2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product processing
IIt has the advantages of high electronic limit drift speed, good radiation resistance and good heat conduction. Suitable for manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.
2inch S-C-N/S doped InP WAFERS
2inch S-C-N/Fe+ doped InP WAFERS
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock,it is according to quantity.