• 4inch Sapphire Single Crystal Wafer Substrate C-Plane M-Plane 1sp 2sp grinding
  • 4inch Sapphire Single Crystal Wafer Substrate C-Plane M-Plane 1sp 2sp grinding
  • 4inch Sapphire Single Crystal Wafer Substrate C-Plane M-Plane 1sp 2sp grinding
  • 4inch Sapphire Single Crystal Wafer Substrate C-Plane M-Plane 1sp 2sp grinding
4inch Sapphire Single Crystal Wafer Substrate C-Plane M-Plane 1sp 2sp grinding

4inch Sapphire Single Crystal Wafer Substrate C-Plane M-Plane 1sp 2sp grinding

Product Details:

Place of Origin: China
Brand Name: ZMSH
Certification: ROHS
Model Number: Sapphire wafer

Payment & Shipping Terms:

Minimum Order Quantity: 25
Price: usd10/pc
Packaging Details: 25 wafers in one cassette
Delivery Time: 3 days
Payment Terms: T/T
Supply Ability: 50000+pcs per month
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Detail Information

Product Name: Sapphire Wafer Substrate Carrier Size: 2inch 3inch 4inch 6inch 8inch 12inch
Surface Quality: 1sp 2sp Grinding Bow: <20μm
Substrate Type: Single Crystal Surface Roughness: Ra<0.5nm
TTV: <5μm
High Light:

Sapphire Single Crystal Wafer Substrate

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C-Plane Single Crystal Wafer

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2sp Grinding Sapphire Substrate

Product Description

Dia4inch 100mm 0.43mm 430um Thickness Sapphire Single Crystal Wafer Substrate C-Plane M-Plane 1sp 2sp

Product Description:

Sapphire Wafer Substrate Carrier is a high-precision product designed for 2inch, 4inch, 6inch sapphire substrates and sapphire windows. It is characterized by its extremely low surface roughness (Ra<0.5nm) and high precision in thickness (0.5-2mm), parallelism (3 Arc Sec) and flatness (λ/10@633nm).

Sapphire crystal has the characteristics of high hardness, good light transmittance, thermal conductivity, electrical

 

insulation, good mechanical and mechanical properties, chemical stability, wear resistance and wind erosion resistance, can be used in a variety of civil and military fields of high strength window materials, microwave tube dielectric materials, ultrasonic conductive components, delay lines, etc. Waveguide laser cavity and precision instrument bearing, crucible material, balance knife edge and other optical components, mechanical structure.

 

Features:

  • Product Name: Sapphire Substrate
  • Substrate Type: Single Crystal
  • Name: Sapphire Wafer Substrate Carrier
  • Clear Aperture: >90%
  • Bow: <20μm
  • Size: 2-6 Inch
  • Sapphire Windows: C-plane M-plane
  • Single Crystal: Superior optical properties

 

Applications:

 

Sapphire Substrate, manufactured by ZMSH, is a single-crystal sapphire substrate made from Al2O3 99.999%. It is characterized by its warp and bow, which are both less than 20μm. The sapphire substrate is available in sizes ranging from 2-6 inch. It is widely used for sapphire windows, LED wafers, optical devices, and other applications due to its excellent properties, such as high thermal conductivity, hardness, and electrical insulation.

ZMSH Sapphire Substrates are made under strict quality control to ensure the highest quality and consistency. The dimensions and material purity are tested before shipment to ensure the best performance. The sapphire substrate is also available in custom shapes and sizes as per the customer's requirements.

ZMSH Sapphire Substrate is an ideal choice for a variety of applications, including sapphire windows, LED wafers, optical devices, and more. It offers excellent thermal conductivity, hardness, and electrical insulation, making it an excellent choice for many applications. ZMSH Sapphire Substrate is also highly resistant to corrosion and abrasion, making it a great choice for long-term use.

Physical and chemical properties of sapphire:

Hexagonal lattice a= 4.76A c= 12.99A, melting point 2053℃, density 3.98g/cm3, hardness 9(Mohs)

Linear thermal expansion coefficient: 6.7x10-6/°C parallel to the C axis, 5.0x10-6/°C perpendicular to the C axis

Thermal conductivity: 46.06@0℃25.12@100℃,12.56@400℃(W/(m.k))

Heat capacity: 0.10(cal/℃)

Refractive index 1.762-1.770, birefringence 0.008~0.010, medium and short wave infrared light transmittance ≥85%

Dielectric constant 9.4@300K A axis to 11.58@300K C axis

Insoluble in water, resistant to acid and alkali corrosion, 300℃ can be hydrofluoric acid, phosphoric acid and melted potassium hydroxide erosion.

 

Technical Parameters:

 

Parameters Value
Name Sapphire Wafer Substrate Carrier
Substrate Type Single Crystal
Surface Orientation C-plane, M-plane
Parallelism 3 Arc Sec
Perpendicularity 3 Arc Sec
Flatness λ/10@633nm
Surface Roughness Ra<0.5nm
TTV <5μm
Size 2-6 Inch
Thickness 0.5-2mm

4inch Sapphire Single Crystal Wafer Substrate C-Plane M-Plane 1sp 2sp grinding 04inch Sapphire Single Crystal Wafer Substrate C-Plane M-Plane 1sp 2sp grinding 14inch Sapphire Single Crystal Wafer Substrate C-Plane M-Plane 1sp 2sp grinding 24inch Sapphire Single Crystal Wafer Substrate C-Plane M-Plane 1sp 2sp grinding 3

 

Customization:

 

ZMSH Sapphire Wafer

ZMSH Sapphire Wafer is a single crystal wafer made of Al2O3 99.999% material with TTV less than 5μm, surface orientation within ±0.5° and warp less than 20μm.

 

Packing and Shipping:

Packaging and Shipping of Sapphire Substrate

Sapphire Substrate is packaged in bubble wrap and heavy-duty cardboard boxes, to ensure that the product is not damaged during transport.

The boxes are labeled with the product name, weight and dimensions. All boxes are also marked with a "Fragile" label, to allow for careful handling.

The product is shipped via a reliable freight carrier, and tracking information is provided in order to monitor the progress of the shipment.

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