4 Inch Silicon Carbide Substrate , High Purity Prime Dummy Ultra Grade 4H- Semi SiC Wafers

Basic Information
Place of Origin: CHINA
Brand Name: ZMKJ
Model Number: 4inch high purity
Minimum Order Quantity: 1pcs
Price: 600-1500usd/pcs by FOB
Packaging Details: single wafer package in 100-grade cleaning room
Delivery Time: 1-6weeks
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 1-50pcs/month
Material: SiC Single Crystal 4H-N Type Grade: Dummy / Research /Production Grade
Thicnkss: 350um Or 500um Suraface: CMP/MP
Application: Device Maker Polishing Test Diameter: 100±0.3mm
High Light:

silicon carbide substrate

,

silicon on sapphire wafers

 High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

PROPERTIES of 4H-SiC Single Crystal

  • Lattice Parameters: a=3.073Å c=10.053Å
  • Stacking Sequence: ABCB
  • Mohs Hardness: ≈9.2
  • Density: 3.21 g/cm3
  • Therm. Expansion Coefficient: 4-5×10-6/K
  • Refraction Index: no= 2.61 ne= 2.66
  • Dielectric Constant: 9.6
  • Thermal Conductivity: a~4.2 W/cm·K@298K
  • (N-type, 0.02 ohm.cm) c~3.7 W/cm·K@298K
  • Thermal Conductivity: a~4.9 W/cm·K@298K
  • (Semi-insulating) c~3.9 W/cm·K@298K
  • Band-gap: 3.23 eV Band-gap: 3.02 eV
  • Break-Down Electrical Field: 3-5×10 6V/m
  • Saturation Drift Velocity: 2.0×105m/

4 inch n-doped 4H Silicon Carbide SiC Wafer

 High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification

 

4 inch Diameter High Purity 4H Silicon Carbide Substrate Specifications

SUBSTRATE PROPERTY

Production Grade

Research Grade

Dummy Grade

Diameter

100.0 mm+0.0/-0.5 mm

Surface Orientation

{0001} ±0.2°

Primary Flat Orientation

<11-20> ± 5.0 ̊

Secondary Flat Orientation

90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up

Primary Flat Length

32.5 mm ±2.0 mm

Secondary Flat Length

18.0 mm ±2.0 mm

Wafer Edge

Chamfer

Micropipe Density

≤5 micropipes/ cm2

10 micropipes/ cm2

≤50 micropipes/ cm2

Polytype areas by high-intensity light

None permitted

10% area

Resistivity

1E5 Ω·cm

(area 75%)≥1E5 Ω·cm

Thickness

350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm

TTV

10μm

15 μm

Bow(absolute value)

25 μm

30 μm

Warp

45 μm

Surface Finish

Double Side Polish, Si Face CMP(chemical polishing)

Surface Roughness

CMP Si Face Ra≤0.5 nm

N/A

Cracks by high-intensity light

None permitted

Edge chips/indents by diffuse lighting

None permitted

Qty.2 <1.0 mm width and depth

Qty.2 <1.0 mm width and depth

Total usable area

≥90%

≥80%

N/A

*The other specifications can be customized according to customers requirements

 

6 inch High-purity Semi-insulating 4H-SiC Substrates Specifications

Property

U(Ultra) Grade

P(Production)Grade

R(Research)Grade

D(Dummy)Grade

Diameter

150.0 mm±0.25 mm

Surface Orientation

{0001} ± 0.2°

Primary Flat Orientation

<11-20> ± 5.0 ̊

Secondary flat Orientation

N/A

Primary Flat Length

47.5 mm ±1.5 mm

Secondary flat Length

None

Wafer Edge

Chamfer

Micropipe Density

≤1 /cm2

≤5 /cm2

≤10 /cm2

≤50 /cm2

Polytype area by High-intensity Light

None

≤ 10%

Resistivity

≥1E7 Ω·cm

(area 75%)≥1E7 Ω·cm

Thickness

350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm

TTV

10 μm

Bow(Absolute Value)

40 μm

Warp

60 μm

Surface Finish

C-face: Optical polished, Si-face: CMP

Roughness(10μm×10μm)

CMP Si-face Ra<0.5 nm

N/A

Crack by High-intensity Light

None

Edge Chips/Indents by Diffuse Lighting

None

Qty≤2, the length and width of each<1mm

Effective Area

≥90%

≥80%

N/A


* Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.

4 Inch Silicon Carbide Substrate , High Purity Prime Dummy Ultra Grade 4H- Semi SiC Wafers 14 Inch Silicon Carbide Substrate , High Purity Prime Dummy Ultra Grade 4H- Semi SiC Wafers 24 Inch Silicon Carbide Substrate , High Purity Prime Dummy Ultra Grade 4H- Semi SiC Wafers 3

 

About  SiC Substrates Applications
 
4 Inch Silicon Carbide Substrate , High Purity Prime Dummy Ultra Grade 4H- Semi SiC Wafers 4
 
CATALOGUE   COMMON  SIZE                             
 

 

4H-N Type / High Purity  SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

 

4H Semi-insulating /  High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
 
 
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot

 
 Customzied size for 2-6inch 
 

 

Sales & Customer Service               

Materials Purchasing

The materials purchasing department is responsible to gather all the raw materials needed to produce your product. Complete traceability of all products and materials, including chemical and physical analysis are always available.

Quality

During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.

 

Service

We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.

we are at your side by any time when you have problem,and resolve it in 10hours.

 

Contact Details
Manager

WhatsApp : +8615801942596