|SIZE:||2~ 4 INCH||Thickness:||350-650um|
|Application:||III-V Direct Bandgap Semiconductor Material||Surface:||Ssp/dsp|
|Package:||Single Wafer Box|
InP Semiconductor Substrate,
Single Crystal Semiconductor Substrate,
650um InP wafers
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe +
IIt has the advantages of high electronic limit drift speed, good radiation resistance and good heat conduction. Suitable for manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.
1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.
2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product processing
|size (mm)||Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized|
|polish||single or doubles side polished|
|package||100 grade cleaning plastic bag in 1000 cleaning room|
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock,it is according to quantity.