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Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate
Product Details:
| Place of Origin: | CHINA |
| Brand Name: | zmkj |
| Model Number: | InP |
Payment & Shipping Terms:
| Minimum Order Quantity: | 3pcs |
|---|---|
| Price: | by case |
| Packaging Details: | single wafer package in 1000-grade cleaning room |
| Delivery Time: | 2-4weeks |
| Payment Terms: | T/T, Western Union |
| Supply Ability: | 500pcs |
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Detail Information |
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| Material: | InP | Growth Method: | VFG |
|---|---|---|---|
| SIZE: | 2~ 4 INCH | Thickness: | 350-650um |
| Application: | III-V Direct Bandgap Semiconductor Material | Surface: | Ssp/dsp |
| Package: | Single Wafer Box | ||
| High Light: | InP Semiconductor Substrate,Single Crystal Semiconductor Substrate,650um InP wafers |
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Product Description
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe +
growth (modified VFG method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed.
The dopant (Fe, S, Sn or Zn)is added to the crucible along with the polycrystal. High pressure is applied inside the chamber to prevent decomposition of the Indium Phosphide.he company has developed a process to yield fully stoechiometric, high purity and low dislocation density inP single crystal.
The VFG technique improves upon the LEC method thanks to a thermal baffle technology in connection with a numerical
modeling of thermal growth conditions. tCZ is a cost-effective mature technology with high quality reproducibility from boule to boule.
Applications:
IIt has the advantages of high electronic limit drift speed, good radiation resistance and good heat conduction. Suitable for manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.
Features:
1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.
2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product processing
| size (mm) | Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized | ||||||
| ra | Surface roughness(Ra):<=5A | ||||||
| polish | single or doubles side polished | ||||||
| package | 100 grade cleaning plastic bag in 1000 cleaning room | ||||||
---FAQ –
Q: Are you trading company or manufacturer ?
A: zmkj is a trading company but have a sapphire manufacturer
as a supplier of semiconductor materials wafers for a wide span of applications.
Q: How long is your delivery time?
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock,it is according to quantity.