• Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer
  • Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer
  • Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer
Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer

Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer

Product Details:

Place of Origin: CHINA
Brand Name: ZMKJ
Model Number: CUSTOMIZED SIZE

Payment & Shipping Terms:

Minimum Order Quantity: 5pcs
Price: by case
Packaging Details: single wafer package in 100-grade cleaning room
Delivery Time: 1-6weeks
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 1-50pcs/month
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Detail Information

Material: SiC Single Crystal 4h-semi Grade: Test Grade
Thicnkss: 0.35mm Or 0.5mm Suraface: Polished DSP
Application: EPITAXIAL Diameter: 3INCH
Color: Transparent MPD: <10cm-2
Type: Un-doped High Purity Resistivity: >1E7 O.hm
High Light:

0.35mm Silicon Carbide Wafer

,

4 Inch Silicon Carbide Wafer

,

SiC Silicon Carbide Wafer

Product Description

 

 

Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ High purity un-doped 4H-semi resistivity>1E7 3inch 4inch 0.35mm sic wafers

 

About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

 

1. Description
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61
ne = 2.66

no = 2.60
ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K

 
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

4 inch n-doped 4H Silicon Carbide SiC Wafer

4H-N  4inch diameter Silicon Carbide (SiC) Substrate Specification

2inch diameter Silicon Carbide (SiC) Substrate Specification  
Grade Zero MPD Grade Production Grade Research Grade Dummy Grade  
 
Diameter 100. mm±0.38mm  
 
Thickness 350 μm±25μm or 500±25um Or other customized thickness   
 
Wafer Orientation  On axis : <0001>±0.5° for 4h-semi   
 
Micropipe Density ≤1 cm-2 ≤5 cm-2 ≤10cm-2 ≤30 cm-2  
 
Resistivity 4H-N 0.015~0.028 Ω•cm  
 
6H-N   0.02~0.1 Ω•cm  
 
4h-semi ≥1E7 Ω·cm  
 
Primary Flat {10-10}±5.0°  
 
Primary Flat Length 18.5 mm±2.0 mm  
 
Secondary Flat Length 10.0mm±2.0 mm  
 
Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°  
 
Edge exclusion 1 mm  
 
TTV/Bow /Warp ≤10μm /≤15μm /≤30μm  
 
Roughness Polish Ra≤1 nm  
 
CMP Ra≤0.5 nm  
 
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm  
 
 
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%  
 
Polytype Areas by high intensity light None Cumulative area ≤2% Cumulative area ≤5%  
 
 
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length  
 
 
edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each  

 

 

Applications:

1) III-V Nitride Deposition

2) Optoelectronic Devices

3) High-Power Devices

4) High-Temperature Devices

5) High-Frequency Power Devices

 

Production display show

Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer 1Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer 2

 
Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer 3
 
 
CATALOGUE   COMMON  SIZE   In  OUR INVENTORY LIST  
 

 

4H-N Type / High Purity  SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

4H Semi-insulating /  High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
 
 
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot

 
 Customzied size for 2-6inch 
 

SiC Applications 

Application areas

  • 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
  • diodes, IGBT, MOSFET
  • 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.

 

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