5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial

Basic Information
Place of Origin: CHINA
Brand Name: zmkj
Model Number: GaN-FS-C-U-C50-SSP
Minimum Order Quantity: 10pcs
Price: 1200~2500usd/pc
Packaging Details: single wafer case by vacuum package
Delivery Time: 1-5weeks
Payment Terms: T/T
Supply Ability: 50pcs per month
Material: GaN Single Crystal Size: 10x10/5x5/20x20mmt
Thickness: 0.35mm Type: N-type
Application: Semiconductor Device
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2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane)

 

GaN Wafer Characteristic

Product Gallium nitride (GaN) substrates
Product Description:

Saphhire GaN template is presented Epitxial hydride vapor phase epitaxy (HVPE) method. In the HVPE process,

the acid produced by the reaction GaCl, which is in turn reacted with ammonia to produce gallium nitride melt. Epitaxial GaN template is a cost-effective way to replace gallium nitride single crystal substrate.

Technical parameters:
Size 2 "round; 50mm ± 2mm
Product Positioning C-axis <0001> ± 1.0.
Conductivity type N-type & P-type
Resistivity R <0.5Ohm-cm
Surface treatment (Ga face) AS Grown
RMS <1nm
Available surface area > 90%
Specifications:

 

GaN epitaxial film (C Plane), N-type, 2 "* 30 microns, sapphire;

GaN epitaxial film (C Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (R Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (M Plane), N-type, 2 "* 5 microns sapphire.

AL2O3 + GaN film (N-type doped Si); AL2O3 + GaN film (P-type doped Mg)

Note: according to customer demand special plug orientation and size.

Standard Packaging: 1000 clean room, 100 clean bag or single box packaging
 

5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial 0

 

Application

GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.

  • Laser Projection Display, Power Device, etc.
  • Date storage
  • Energy-efficient lighting
  • Full color fla display
  • Laser Projecttions
  • High- Efficiency Electronic devices
  • High- Frequency Microwave Devices
  • High-energy Detection and imagine
  • New energy solor hydrogen technology
  • Environment Detection and biological medicine
  • Light source terahertz band


5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial 1

Specifications:

  Non-Polar Freestanding GaN Substrates(a-plane and m-plane)
Item GaN-FS-a GaN-FS-m
Dimensions 5.0mm×5.5mm
5.0mm×10.0mm
5.0mm×20.0mm
Customized Size
Thickness 350 ± 25 µm
Orientation a-plane ± 1° m-plane ± 1°
TTV ≤15 µm
BOW ≤20 µm
Conduction Type N-type
Resistivity(300K) < 0.5 Ω·cm
Dislocation Density Less than 5x106 cm-2
Useable Surface Area > 90%
Polishing Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

 

 

5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial 2

 

 



 

 

 

Contact Details
Manager

Phone Number : +8615801942596

WhatsApp : +8615801942596