4'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers

Basic Information
Place of Origin: CHINA
Brand Name: ZMKJ
Model Number: 4inch P-grade
Minimum Order Quantity: 1pcs
Price: 600-1500usd/pcs by FOB
Packaging Details: single wafer package in 100-grade cleaning room
Delivery Time: 1-6weeks
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 1-50pcs/month
Material: SiC Single Crystal 4H-N Type Grade: Dummy / Research /Production Grade
Thicnkss: 350um Or 500um Suraface: CMP/MP
Application: Device Maker Polishing Test Diameter: 100±0.3mm
High Light:

silicon carbide substrate

,

sic wafer

4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs

 

4 inch n-doped 4H Silicon Carbide SiC Wafer

4 inch diameter Silicon Carbide (SiC) Substrate Specification

 Grade

Zero MPD Production Grade  

(Z Grade)

Production Grade

(P Grade)

Dummy Grade (D Grade)

Diameter

99.5-100 mm

 Thickness

4H-N

350 μm±25μm

4H-SI

500 μm±25μm

 Wafer Orientation

Off axis : 4.0°toward< 1120 > ±0.5° for 4H-N On axis : <0001>±0.5° for 4H-SI

 Micropipe Density

4H-N

0.5cm-2

2 cm-2

15 cm-2

4H-SI

1cm-2

5 cm-2

15 cm-2

 Resistivity

4H-N

0.015~0.025 Ω·cm

0.015~0.028 Ω·cm

4H-SI

1E7 Ω·cm

1E5 Ω·cm

 Primary Flat

{10-10}±5.0°

 Primary Flat Length

32.5 mm±2.0 mm

 Secondary Flat Length

18.0mm±2.0 mm

 Secondary Flat Orientation

Silicon face up: 90° CW. from Prime flat ±5.0°

 Edge exclusion

2 mm

 LTV/TTV/Bow /Warp

4μm/10μm /25μm /35μm

10μm/15μm /25μm /40μm

 Roughness

Polish Ra1 nm

CMP Ra0.5 nm

Cracks by high intensity light

None

Cumulative length 10mm, single length≤2mm

 Hex Plates by high intensity light

Cumulative area 0.05%

Cumulative area 0.1%

Polytype Areas by high intensity light

None

Cumulative area 3%

Visual Carbon Inclusions

Cumulative area 0.05%

Cumulative area 3%

Scratches by high intensity light

None

Cumulative length1×wafer diameter

 Edge chip

None

5 allowed, 1 mm each

Contamination by high intensity light

None

 Packaging

Multi-wafer Cassette Or Single Wafer Container

Notes:
* Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.

4'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers 14'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers 24'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers 3

 

About  SiC Substrates Applications
 
4'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers 4
 
CATALOGUE   COMMON  SIZE                             

 

4H-N Type / High Purity  SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

 

4H Semi-insulating /  High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
 
 
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot

 
 Customzied size for 2-6inch 
 

 

Sales & Customer Service               

Materials Purchasing

The materials purchasing department is responsible to gather all the raw materials needed to produce your product. Complete traceability of all products and materials, including chemical and physical analysis are always available.

Quality

During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.

 

Service

We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.

we are at your side by any time when you have problem,and resolve it in 10hours.

4'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers 5

Contact Details
Manager

Phone Number : +8615801942596

WhatsApp : +8615801942596