|Substrate:||Sapphire Wafer||Layer:||GaN Template|
|Layer Thickness:||1-5um||Conductivity Type:||N/P|
|Orientation:||0001||Application:||High Power/high Frequency Electronic Devices|
|Application 2:||5G Saw/BAW Devices||Silicon Thickness:||525um/625um/725um|
Sapphire based gan templates,
4" gan templates,
GaN semiconductor Substrate
2inch 4inch 4" Sapphire based GaN templates GaN film on sapphire substrate
1) Wide band gap compound semiconductor material with high band width (2.3~6.2eV), can cover the red yellow green, blue, violet and ultraviolet spectrum, so far is that any other semiconductor materials are unable to achieve.
2) Mainly used in blue and violet light emitting device.
2) High temperature property, Normal work at 300℃, very suitable for aerospace, military and other high temperature environment.
3) The electron drift has high saturation velocity, low dielectric constant and good thermal conductivity.
4) Acid and alkali resistance, corrosion resistance, can be used in harsh environment.
5) High voltage characteristics, impact resistance, high reliability.
6) Large power, the communication equipment is very eager.
1) light emitting diodes, LED
2) field effect transistors, FET
3) laser diodes, LD
Other relaterd 4INCH GaN Template Specification
|Lattice constant (Å)||a=3.112, c=4.982|
|Conduction band type||Direct bandgap|
|Surface microhardness (Knoop test)||800|
|Melting point (℃)||2750 (10-100 bar in N2)|
|Thermal conductivity (W/m·K)||320|
|Band gap energy (eV)||6.28|
|Electron mobility (V·s/cm2)||1100|
|Electric breakdown field (MV/cm)||11.7|