30mm Dia AlN Single Crystal Semiconductor Substrate

Basic Information
Place of Origin: China
Brand Name: ZMKJ
Model Number: UTI-AlN-150
Minimum Order Quantity: 3pcs
Price: by case
Packaging Details: single wafer container in cleaning room
Delivery Time: in 30days
Payment Terms: T/T, Western Union, paypal
Supply Ability: 50pcs/month
Substrate: Silicon Wafer Layer: AlN Template
Layer Thickness: 200-1000nm Conductivity Type: N/P
Orientation: 0001 Application: High Power/high Frequency Electronic Devices
Application 2: 5G Saw/BAW Devices Silicon Thickness: 525um/625um/725um
High Light:

AlN Semiconductor Substrate

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30mm dia aln template

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30mm aln single crystal

 

diameter 150mm   8inch 4inch 6inch Silicon-based AlN templates 500nm AlN film on silicon substrate

 

Applications of   AlN template
Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future
electronic devices. As a typical kind of 3rd/4th-generation semiconductor material, aluminum nitride (AlN) has
superior physical and chemical properties such as wide bandgap, high thermal conductivity, high breakdown filed,
high electronic mobility and corrosion/radiation resistance, and is a perfect substrate for optoelectronic devices,
radio frequency (RF) devices, high-power/high-frequency electronic devices, etc.. Particularly, AlN substrate is the
best candidate for UV-LED, UV detectors, UV lasers, 5G high-power/high-frequency RF devices and 5G SAW/BAW
devices, which could widely be used in environmental protection, electronics, wireless communications, printing,
biology, healthcare, military and other fields, such as UV purification/sterilization, UV curing, photocatalysis, coun
terfeit detection, high-density storage, medical phototherapy, drug discovery, wireless and secure communication,
aerospace/deep-space detection and other fields.
we have developed a serials of proprietary processes and technologies to fabricate
high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN
templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive
market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc
 
We currently provide customers with standardized 10x10mm/Φ10mm/Φ15mm/Φ20mm/Φ25.4mm/Φ30mm/Φ50.8mm high quality nitrogen
Aluminum single crystal substrate products, and can also provide customers with 10-20mm non-polar
M-plane aluminum nitride single crystal substrate, or customize non-standard 5mm-50.8mm to customers
Polished aluminum nitride single crystal substrate. This product is widely used as a high-end substrate material
Used in UVC-LED chips, UV detectors, UV lasers, and various high power
/High temperature/high frequency electronic device field.
 
 
                             Specification 
Characteristic Specification
  • Model                                                           UTI-AlN-030B-single crystal
  • Diameter                                                            Dia30±0.5mm 
  • Substrate thickness (µm)                                      400 ± 50
  • Orientation                                                        C-axis [0001] +/- 0.5°

     Quality Grade              S-grade(super)    P-grade(production)       R-grade(Research) 

  • Cracks                                                  None                      None                                   <3mm 
  • FWHM-2θXRD@(0002)                  <150                       <300                                    <500
  • FWHM-HRXRD@(10-12)                 <100                    <200                                     <400
  • Surface Roughness [5×5µm] (nm)          Al-face <0.5nm;     N-face(back surface) <1.2um; 
  • Usable area                                       90%
  • Absorbance                              <50 ;                   <70 ;                              <100;
  • 1st  OF length orientation                                         {10-10} ±5°;
  • TTV (µm)                                                                       ≤30
  • Bow (µm)                                                                        ≤30
  • Warp (µm)                                                                    -30~30
  • Note: These characterization results may vary slightly depending on the equipments and/or software employed
30mm Dia AlN Single Crystal Semiconductor Substrate 0

30mm Dia AlN Single Crystal Semiconductor Substrate 1

30mm Dia AlN Single Crystal Semiconductor Substrate 2

 

30mm Dia AlN Single Crystal Semiconductor Substrate 3

30mm Dia AlN Single Crystal Semiconductor Substrate 4

 
impurity element    C O Si B Na W P S Ti Fe
PPMW                        27 90 5.4 0.92 0.23 <0.1 <0.1 <0.5 0.46 <0.5
 
 
Crystal structure

Wurtzite

Lattice constant (Å) a=3.112, c=4.982
Conduction band type Direct bandgap
Density (g/cm3) 3.23
Surface microhardness (Knoop test) 800
Melting point (℃) 2750 (10-100 bar in N2)
Thermal conductivity (W/m·K) 320
Band gap energy (eV) 6.28
Electron mobility (V·s/cm2) 1100
Electric breakdown field (MV/cm) 11.7

 

Contact Details
Manager

Phone Number : +8615801942596

WhatsApp : +8615801942596