2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED

Basic Information
Place of Origin: CHINA
Brand Name: zmkj
Model Number: 4inch SEMI
Minimum Order Quantity: 5pcs
Price: by case
Packaging Details: single wafer packed in 6"plastic box under N2
Delivery Time: 2-4weeks
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 500pcs per month
Material: GaAs Single Crystal SIZE: 4INCH
Thickness: 625um Or Customzied OF Type: OF Flat
Orientation: (100)2°off Surface: DSP
Growth Method: VFG
High Light:

wafer substrate

,

semiconductor wafer

2inch/3inch /4inch /6inch S-C-N Type/ semi-insulation /Si-doped Gallium arsenide GaAs Wafer

Product Description

Our 2’’ to 6’’ semi-conducting & semi-insulating GaAs crystal & wafer are wildly used in semiconductor integrated circuit application & LED general lighting application.

GaAs Wafer Feature and Application
FeatureApplication field
High electron mobilityLight emitting diodes
High frequencyLaser diodes
High conversion efficiencyPhotovoltaic devices
Low power consumptionHigh Electron Mobility Transistor
Direct band gapHeterojunction Bipolar Transistor

2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED 0

2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED 1
PRODUCT DESCRIPTION
 

Specifications of semi-conducting GaAs wafer

     

 Growth Method

VGF

Dopant

p-type: Zn

n-type: Si

Wafer Shape

Round (dia: 2", 3", 4", 6")

Surface Orientation *

(100)±0.5°

* Other Orientations maybe available upon request

Dopant

Si (n-type)

Zn (p-type)

Carrier Concentration (cm-3)

( 0.8-4) × 1018

( 0.5-5) × 1019

Mobility (cm2/V.S.)

( 1-2.5) × 103

50-120

Etch Pitch Density (cm2)

100-5000

3,000-5,000

Wafer Diameter (mm)

50.8±0.3

76.2±0.3

100±0.3

Thickness (µm)

350±25

625±25

625±25

TTV [P/P] (µm)

≤ 4

≤ 4

≤ 4

TTV [P/E] (µm)

≤ 10

≤ 10

≤ 10

WARP (µm)

≤ 10

≤ 10

≤ 10

OF (mm)

17±1

22±1

32.5±1

OF / IF (mm)

7±1

12±1

18±1

Polish*

E/E,
P/E,
P/P

E/E,
P/E,
P/P

E/E,
P/E,
P/P

Specifications of semi-insulating GaAs wafer

Growth Method

VGF

Dopant

SI Type: Carbon

Wafer Shape

Round (DIA: 2", 3", 4", 6")

Surface Orientation *

(100)±0.5°

* Other Orientations maybe available upon request

Resistivity (Ω.cm)

≥ 1 × 107

≥ 1 × 108

Mobility (cm2/V.S)

≥ 5,000

≥ 4,000

Etch Pitch Density (cm2)

1,500-5,000

1,500-5,000

Wafer Diameter (mm)

50.8±0.3

76.2±0.3

100±0.3

150±0.3

Thickness (µm)

350±25

625±25

625±25

675±25

TTV [P/P] (µm)

≤ 4

≤ 4

≤ 4

≤ 4

TTV [P/E] (µm)

≤ 10

≤ 10

≤ 10

≤ 10

WARP (µm)

≤ 10

≤ 10

≤ 10

≤ 15

OF (mm)

17±1

22±1

32.5±1

NOTCH

OF / IF (mm)

7±1

12±1

18±1

N/A

Polish*

E/E,
P/E,
P/P

E/E,
P/E,
P/P

E/E,
P/E,
P/P

E/E,
P/E,
P/P

 
2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED 2
2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED 3
FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg
Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on Alibaba and etc..
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics
Q: Do you have inspection report for material?
We can supply detail report for our products.
 
Packaging – Logistcs
we concern each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product ,
we will take a different packaging process!
 

Contact Details
Manager

Phone Number : +8615801942596

WhatsApp : +8615801942596