2inch 3inch 4inch N-type 15° Semiconductor Substrate Si-doped GaAs Wafer SSP

Basic Information
Place of Origin: CHINA
Brand Name: zmkj
Model Number: GaAs-N-3inch
Minimum Order Quantity: 5pcs
Price: 100-200usd/pcs
Packaging Details: in single or 25pcs cassette wafer case by vacuum package
Delivery Time: 2-4weeks
Payment Terms: T/T, Western Union
Supply Ability: 2000pcs per month
Material: GaAs Crystal Method: VGF
Size: Dia76.2mm Thickess: 350um
Surface: DSP Application: Led,ld Device
Type: N-type Doping: SI-doped

 
 
VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type
Semi-insulating type for Microelectronics,
 
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(GaAs) Gallium Arsenide Wafers
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor
with a Zinc blende crystal structure.
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic
microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.[2]
 
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide,
aluminum gallium arsenide and others.
 
.
GaAs Wafer Feature and Application

FeatureApplication field
High electron mobilityLight emitting diodes
High frequencyLaser diodes
High conversion efficiencyPhotovoltaic devices
Low power consumptionHigh Electron Mobility Transistor
Direct band gapHeterojunction Bipolar Transistor

2inch 3inch 4inch N-type 15° Semiconductor Substrate Si-doped GaAs Wafer SSP 0
Specification
Undoped GaAs
Semi-Insulating GaAs Specifications
 

Growth MethodVGF
DopantCarbon
Wafer Shape*Round (DIA: 2", 3", 4", and 6")
Surface Orientation**(100)±0.5°

*5" Wafers available upon request
**Other Orientations maybe available upon request
 

Resistivity (Ω.cm)≥1 × 107≥1 × 108
Mobility (cm2/V.S)≥ 5,000≥ 4,000
Etch Pitch Density (cm2)1,500-5,0001,500-5,000

 

Wafer Diameter (mm)50.8±0.376.2±0.3100±0.3150±0.3
Thickness (µm)350±25625±25625±25675±25
TTV [P/P] (µm)≤ 4≤ 4≤ 4≤ 4
TTV [P/E] (µm)≤ 10≤ 10≤ 10≤ 10
WARP (µm)≤10≤10≤10≤5
OF (mm)17±122±132.5±1NOTCH
OF / IF (mm)7±112±118±1N/A
Polish*E/E, P/E, P/PE/E, P/E, P/PE/E, P/E, P/PE/E, P/E, P/P

*E=Etched, P=Polished
2inch 3inch 4inch N-type 15° Semiconductor Substrate Si-doped GaAs Wafer SSP 1

Related Products for inventory list
 
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4 inch SI-Dopant N-Type Gallium Arsenide wafer, SSP/DSP
LED/LD Applications
6 inch SI-Dopant N-Type Gallium Arsenide wafer, SSP/DSP
LED/LD Applications
2 inch Undoped Gallium Arsenide wafer, SSP/DSP
Microelectronics Applications
4 inch Undoped Gallium Arsenide wafer, SSP/DSP
Microelectronics Applications
6 inch Undoped Gallium Arsenide wafer, SSP/DSP
Microelectronics Applications


Package & Delivery
2inch 3inch 4inch N-type 15° Semiconductor Substrate Si-doped GaAs Wafer SSP 2
2inch 3inch 4inch N-type 15° Semiconductor Substrate Si-doped GaAs Wafer SSP 3
2inch 3inch 4inch N-type 15° Semiconductor Substrate Si-doped GaAs Wafer SSP 4
FAQ & CONTACT    
This is Eric wang, sales manager of zmkj, our company located in Shanghai, China. Our service time is all time from Monday - Saturday. We are sorry for the inconvenience caused by time difference. If any questions, you can leave my E-mail a message and also add my WeChat,whats app, Skype, I will be online. Welcome to contact me!
 
Q: Are you trading company or manufacturer ?A: We  have our own for wafer fabricating. 
Q: How long is your delivery time? A: Generally it is 1-5 days if the goods are in stock,if not,it is for 2-3weeks
Q: Do you provide samples ? is it free or extra ? A: Yes, we could offer free sample by some size.
Q: What is your terms of payment ? A: for the first bussiness is 100% before delivery.
 
 
 
 

 

Contact Details
Manager

Phone Number : +8615801942596

WhatsApp : +8615801942596