2 Inch DSP SSP Gallium Nitride Wafer A Axis Sapphire Substrates GaN Epitaxial Templates

Basic Information
Place of Origin: CHINA
Brand Name: zmkj
Model Number: 2inch customzied sapphire substrates
Minimum Order Quantity: 25pcs
Price: by case
Packaging Details: 25pcs wafer case by vacuum package
Delivery Time: 1-5weeks
Payment Terms: T/T, Western Union
Supply Ability: 50pcs per month
Material: SAPPHIRE Size: 2inch
Thickness: 0.43mm Type: Customzied Orientation
Application: GaN Epitaxial Growth Growth: HVPE/Mocvd
Surface: Ssp/ Dsp Orientation: A-axis/m-axis/r-axis
High Light:

gan wafer

,

gallium arsenide wafer

 

2inch R-axis sapphire wafer for epi-ready test ,sapphire optical windows, R-axis 2inch sapphire epi-ready​ substrate


1. Description
Sapphire is one of the hardest materials, and possesses very good transmission during the range of visible and near IR spectrum.It is widely used as optical window in infrared and far infrared military equipments, apparatus and instruments of satellite and space technology, and navigation and spaceflight, such as night infrared scope/sight and night vision camera, etc.The sapphire crystal window is intensively applied in high-tech fields.
Sapphire optical windows are ideal for applications where high pressure, vacuum, or corrosive atmospheres are a consideration. Sapphire, a single crystal form of Al2O3, is resistant to attack by strong acids due to its high dielectric constant. It has high compressive strength and a high melting point. It is also resistant to UV radiation darkening.

sapphire application: sapphire optical lens ,sapphire ball, sapphire bearing ,sapphire led wafer, sapphire watch glass lens.
2 Inch DSP SSP Gallium Nitride Wafer A Axis Sapphire Substrates GaN Epitaxial Templates 0
2 Inch DSP SSP Gallium Nitride Wafer A Axis Sapphire Substrates GaN Epitaxial Templates 1
Specification:
Single crystal Al2O3 99.999%2 Inch DSP SSP Gallium Nitride Wafer A Axis Sapphire Substrates GaN Epitaxial Templates 2
Orientation: R-axis 0.5°

Diameter:50.8±0.1mm

Thickness :430±15um or 330±15um

Primary flat:16±1mm

OF Orientation flat: Off R to C axis 45°±0.1° C-plane(0001)

Frontside Surface Roughness:Ra<0.2nm

Backside Surface Roughness: 0.8~1.2um ( Or double side polished, both side Ra<0.2nm)

TTV:<10um BOW:-10~0um WARP:<10um

Laser Mark Series No. by needs

Package:Vacuum-sealed containers with nitrogen backfill in a class 100 environment

Cleanliness :Free visible contamination

 

 

 Item

   

GaN-FS-A-U/N/SI-S

 

GaN-FS-M-U/N/SI-S

GaN-FS-SP-U/N/SI-S

 Dimensions

5.0~10.0× 10.0 mm2

5.0~10.0× 20.0 mm2

 

 Thickness

 

350 ±25 μm

 

(11-20)

(1-100)

(20-21)

(20-2-1) (11-22)

(10-11)

 

 Orientation

 
 
 

TTV(Total Thickness Variation)

 

≤ 10 μm

 

 BOW

 

≤ 10 μm

 

 ConductionType

Resistivity(300K)

N-type < 0.1 Ω·cm

N-type < 0.05 Ω·cm

Semi-Insulating(Fe-doped) > 106 Ω·cm

 

 Dislocation Density

 

From 1x105 to 3x106 cm-2

 

Useable Surface Area

 

> 90%

 

 Polishing

Front Surface: Ra < 0.2 nm (polished)

Back Surface: 1~3 nm (fine ground); option: < 0.2 nm (polished)

Package

Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

 

2. QC Standard

2 Inch DSP SSP Gallium Nitride Wafer A Axis Sapphire Substrates GaN Epitaxial Templates 3

 

3. FAQ:

1. Can you accept OEM?
Yes!.We can manufacture as per your request specification.
2. Can you deliver the goods via our shipping agent?
Yes, we could help you make the delivery using your shipping agent
3. What about your After-sales service?
Yes.We promise that we can change or refund products if there are any quality problem.

 

If you need more professional help, please contact us. Our technical engineers

would like to give advices according to your requirements

2 Inch DSP SSP Gallium Nitride Wafer A Axis Sapphire Substrates GaN Epitaxial Templates 4

Contact Details
Manager

Phone Number : +8615801942596

WhatsApp : +8615801942596