Silicon Carbide Cantilever Paddle (SiC Cantilever Paddle)

Product Overview

The silicon carbide (SiC) cantilever paddle is a critical component made from reaction-bonded silicon carbide (RB-SiC). Designed with a cantilever structure, it offers outstanding high-temperature stability, corrosion resistance, and load-bearing capacity, making it an ideal choice for semiconductor diffusion furnaces, LPCVD systems, photovoltaic applications, and corrosive chemical environments.

Key Features

1. High-Temperature Stability – No deformation under high temperatures (up to 1380 °C), ensuring reliable wafer handling.

2. Strong Load Capacity – Stable cross-section allows safe support of large-diameter wafers, compatible with existing furnace tubes for larger wafer sizes.

3. LPCVD Compatibility – Very low thermal expansion coefficient, closely matching LPCVD coatings, extending maintenance and cleaning cycles while reducing contamination.

4. Durability – Excellent resistance to extreme hot/cold thermal shock, significantly extending service life.

5. High Purity – Free of metallic contamination, meeting the stringent purity requirements of semiconductor and photovoltaic industries.

Technical Parameters

Available Dimensions

• Standard sizes: 2378 mm, 2550 mm, 2660 mm

• Custom dimensions available upon request

Typical Applications

• Semiconductor Industry: Wafer loading, handling, and transportation during diffusion, oxidation, nitridation, and LPCVD processes.

• Photovoltaics: Carrier paddles for polycrystalline and monocrystalline wafers in high-temperature coating and diffusion steps (1000–1300 °C).

• Chemical Industry: Corrosion-resistant stirring and circulation in highly aggressive environments.