A-Axis Gallium Nitride Wafer HVPE Free Standing Chip Template 5x5 / 10x10 / 5x10 Mm
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A Axis Gallium Nitride Wafer
,5x5 Gallium Nitride Wafer
,Free Standing Chip Template GaN Wafer
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MaterialGaN Single Crystal
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Size10x10/5x5/5x10 Mmt
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Thickness0.35mm
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TypeN-type
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ApplicationSemiconductor Device
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Place of OriginCHINA
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Brand Namezmkj
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Model NumberGaN-FS-M-N-S5*10-DSP
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Minimum Order Quantity10pcs
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Price1200~2500usd/pc
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Packaging Detailssingle wafer case by vacuum package
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Delivery Time1-5weeks
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Payment TermsT/T
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Supply Ability50pcs per month
A-Axis Gallium Nitride Wafer HVPE Free Standing Chip Template 5x5 / 10x10 / 5x10 Mm
2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane)
GaN Wafer Characteristic
| Product | Gallium nitride (GaN) substrates | ||||||||||||||
| Product Description: |
Saphhire GaN template is presented Epitxial hydride vapor phase epitaxy (HVPE) method. In the HVPE process, the acid produced by the reaction GaCl, which is in turn reacted with ammonia to produce gallium nitride melt. Epitaxial GaN template is a cost-effective way to replace gallium nitride single crystal substrate. |
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| Technical parameters: |
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| Specifications: |
GaN epitaxial film (C Plane), N-type, 2 "* 30 microns, sapphire; GaN epitaxial film (C Plane), N-type, 2 "* 5 microns sapphire; GaN epitaxial film (R Plane), N-type, 2 "* 5 microns sapphire; GaN epitaxial film (M Plane), N-type, 2 "* 5 microns sapphire. AL2O3 + GaN film (N-type doped Si); AL2O3 + GaN film (P-type doped Mg) Note: according to customer demand special plug orientation and size. |
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| Standard Packaging: | 1000 clean room, 100 clean bag or single box packaging |
Application
GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.
- Laser Projection Display, Power Device, etc.
- Date storage
- Energy-efficient lighting
- Full color fla display
- Laser Projecttions
- High- Efficiency Electronic devices
- High- Frequency Microwave Devices
- High-energy Detection and imagine
- New energy solor hydrogen technology
- Environment Detection and biological medicine
- Light source terahertz band
Specifications:
| Non-Polar Freestanding GaN Substrates(a-plane and m-plane) | ||
| Item | GaN-FS-a | GaN-FS-m |
| Dimensions | 5.0mm×5.5mm | |
| 5.0mm×10.0mm | ||
| 5.0mm×20.0mm | ||
| Customized Size | ||
| Thickness | 350 ± 25 µm | |
| Orientation | a-plane ± 1° | m-plane ± 1° |
| TTV | ≤15 µm | |
| BOW | ≤20 µm | |
| Conduction Type | N-type | |
| Resistivity(300K) | < 0.5 Ω·cm | |
| Dislocation Density | Less than 5x106 cm-2 | |
| Useable Surface Area | > 90% | |
| Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished | |
| Back Surface: Fine ground | ||
| Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. | |
Q:What is your minimum order requirement?
A:MOQ:10 piece
Q:How long will it take to execute my order and delivery it ?
A:confirm the order 1days After confirming the payment and delivery in 5days if on stocks.
Q:Can you give warranty of your products ?
A:We promise the quality, if the quality has any problems, we will produce new produces or return you money.
Q:How to pay?
A:T/T, Paypal, West Union, bank transfer.
Q:HOW about the freight ?
A:we can help you pay for the fee if you don’t have account,
if the order is over 10000usd, we can delivery by CIF.
Our products are sold all over the world, you can rest assured.