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2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC

2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC

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    GaN Templates Semiconductor Substrate

    ,

    2" Sapphire Based Semiconductor Substrate

    ,

    GaN-On-SiC Semiconductor Substrate

  • Substrate
    GaN-On-Sapphire
  • Layer
    GaN Template
  • Layer Thickness
    1-5um
  • Conductivity Type
    N/P
  • Orientation
    0001
  • Application
    High Power/high Frequency Electronic Devices
  • Application 2
    5G Saw/BAW Devices
  • Silicon Thickness
    525um/625um/725um
  • Place of Origin
    China
  • Brand Name
    ZMKJ
  • Model Number
    4inch GaN-sapphire
  • Minimum Order Quantity
    2pcs
  • Price
    by case
  • Packaging Details
    single wafer container in cleaning room
  • Delivery Time
    in 20days
  • Payment Terms
    T/T, Western Union, paypal
  • Supply Ability
    50pcs/month

2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC

2inch 4inch 4" 2'' Sapphire based GaN templates GaN film on the sapphire substrate GaN-On-Sapphire GaN wafers GaN substrates GaN windows

 

Properties of GaN

1) At room temperature, GaN is insoluble in water, acid and alkali.

2)Dissolved in a hot alkaline solution at a very slow rate.

3) NaOH, H2SO4 and H3PO4 can quickly corrode the poor quality of GaN, can be used for these poor quality GaN crystal defect detection.

4) GaN in the HCL or hydrogen, at high temperature presents unstable characteristics.

5) GaN is the most stable under nitrogen.

Electrical properties of GaN

1) The electrical properties of GaN are the most important factors affecting the device.

2) The GaN with no doping was n in all the cases, and the electron concentration of the best sample was about 4*(10^16)/c㎡.

3) Generally, the prepared P samples are highly compensated.

Optical Properties Of GaN

1) Wide band gap compound semiconductor material with high band width (2.3~6.2eV), can cover the red yellow green, blue, violet and ultraviolet spectrum, so far is that any other semiconductor materials are unable to achieve.

2) Mainly used in blue and violet light emitting device.

Properties of GaN Material

1) High frequency property, arrive at 300G Hz. (Si is 10G & GaAs is 80G)

2) High temperature property, Normal work at 300℃, very suitable for aerospace, military and other high temperature environment.

3) The electron drift has high saturation velocity, low dielectric constant and good thermal conductivity.

4) Acid and alkali resistance, corrosion resistance, can be used in harsh environment.

5) High voltage characteristics, impact resistance, high reliability.

6) Large power, the communication equipment is very eager.

 

Main Usage Of GaN

1) light emitting diodes, LED

2) field effect transistors, FET

3) laser diodes, LD

 
Specification
2 inch Blue/Green LED Epi. On Sapphire
 
 
 
Substrate
Type
Flat Sapphire
Polish
Single side polished (SSP) / Double side polished (DSP)
Dimension
100 ± 0.2 mm
Orientation
C plane (0001) off angle toward M-axis 0.2 ± 0.1°
Thickness
650 ± 25 μm
 
 
 
 
 
 
 
Epilayer
Structure (ultra-low current
design)
0.2μm pGaN/0.5μm MQWs/2.5μm nGaN/2.0μm uGaN
Thickness/std
5.5 ± 0.5μm/ <3%
Roughness (Ra)
<0.5 nm
Wavelength/std
Blue LED
Green LED
465 ± 10 nm/ < 1.5nm
525 ± 10 nm/ <2.0 nm
Wavelength FWHMs
< 20 nm
< 35 nm
Dislocation density
< 5×10^8 cm-²
Particles (>20μm)
< 4 pcs
Bow
< 50 μm
Chip Performance (Based on your chip technology, here for
reference,size<100μm)
Parameter
Peak EQE
Vfin@1μA
Vr@-10μA
Ir@-15V
ESDHM@2KV
Blue LED
> 30%
2.3-2.5V
> 40V
< 0.08μA
> 95%
Green LED
> 20%
2.2-2.4V
> 25V
< 0.1μA
> 95%
Useable Area
> 90% (edge and macro defects exclusion)
Package
Packaged in a cleanroom in a single wafer container

 

 

 

2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC 0

 

Crystal structure

Wurtzite

Lattice constant (Å) a=3.112, c=4.982
Conduction band type Direct bandgap
Density (g/cm3) 3.23
Surface microhardness (Knoop test) 800
Melting point (℃) 2750 (10-100 bar in N2)
Thermal conductivity (W/m·K) 320
Band gap energy (eV) 6.28
Electron mobility (V·s/cm2) 1100
Electric breakdown field (MV/cm) 11.7

2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC 12" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC 2