• 2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC
  • 2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC
2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC

2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC

Product Details:

Place of Origin: China
Brand Name: ZMKJ
Model Number: 4inch GaN-sapphire

Payment & Shipping Terms:

Minimum Order Quantity: 2pcs
Price: by case
Packaging Details: single wafer container in cleaning room
Delivery Time: in 20days
Payment Terms: T/T, Western Union, paypal
Supply Ability: 50pcs/month
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Detail Information

Substrate: GaN-On-Sapphire Layer: GaN Template
Layer Thickness: 1-5um Conductivity Type: N/P
Orientation: 0001 Application: High Power/high Frequency Electronic Devices
Application 2: 5G Saw/BAW Devices Silicon Thickness: 525um/625um/725um
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GaN Templates Semiconductor Substrate


2" Sapphire Based Semiconductor Substrate


GaN-On-SiC Semiconductor Substrate

Product Description

2inch 4inch 4" 2'' Sapphire based GaN templates GaN film on the sapphire substrate GaN-On-Sapphire GaN wafers GaN substrates GaN windows


Properties of GaN

1) At room temperature, GaN is insoluble in water, acid and alkali.

2)Dissolved in a hot alkaline solution at a very slow rate.

3) NaOH, H2SO4 and H3PO4 can quickly corrode the poor quality of GaN, can be used for these poor quality GaN crystal defect detection.

4) GaN in the HCL or hydrogen, at high temperature presents unstable characteristics.

5) GaN is the most stable under nitrogen.

Electrical properties of GaN

1) The electrical properties of GaN are the most important factors affecting the device.

2) The GaN with no doping was n in all the cases, and the electron concentration of the best sample was about 4*(10^16)/c㎡.

3) Generally, the prepared P samples are highly compensated.

Optical Properties Of GaN

1) Wide band gap compound semiconductor material with high band width (2.3~6.2eV), can cover the red yellow green, blue, violet and ultraviolet spectrum, so far is that any other semiconductor materials are unable to achieve.

2) Mainly used in blue and violet light emitting device.

Properties of GaN Material

1) High frequency property, arrive at 300G Hz. (Si is 10G & GaAs is 80G)

2) High temperature property, Normal work at 300℃, very suitable for aerospace, military and other high temperature environment.

3) The electron drift has high saturation velocity, low dielectric constant and good thermal conductivity.

4) Acid and alkali resistance, corrosion resistance, can be used in harsh environment.

5) High voltage characteristics, impact resistance, high reliability.

6) Large power, the communication equipment is very eager.


Main Usage Of GaN

1) light emitting diodes, LED

2) field effect transistors, FET

3) laser diodes, LD

2 inch Blue/Green LED Epi. On Sapphire
Flat Sapphire
Single side polished (SSP) / Double side polished (DSP)
100 ± 0.2 mm
C plane (0001) off angle toward M-axis 0.2 ± 0.1°
650 ± 25 μm
Structure (ultra-low current
0.2μm pGaN/0.5μm MQWs/2.5μm nGaN/2.0μm uGaN
5.5 ± 0.5μm/ <3%
Roughness (Ra)
<0.5 nm
Blue LED
Green LED
465 ± 10 nm/ < 1.5nm
525 ± 10 nm/ <2.0 nm
Wavelength FWHMs
< 20 nm
< 35 nm
Dislocation density
< 5×10^8 cm-²
Particles (>20μm)
< 4 pcs
< 50 μm
Chip Performance (Based on your chip technology, here for
Peak EQE
Blue LED
> 30%
> 40V
< 0.08μA
> 95%
Green LED
> 20%
> 25V
< 0.1μA
> 95%
Useable Area
> 90% (edge and macro defects exclusion)
Packaged in a cleanroom in a single wafer container




2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC 0


Crystal structure


Lattice constant (Å) a=3.112, c=4.982
Conduction band type Direct bandgap
Density (g/cm3) 3.23
Surface microhardness (Knoop test) 800
Melting point (℃) 2750 (10-100 bar in N2)
Thermal conductivity (W/m·K) 320
Band gap energy (eV) 6.28
Electron mobility (V·s/cm2) 1100
Electric breakdown field (MV/cm) 11.7

2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC 12" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC 2

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