SHANGHAI FAMOUS TRADE CO.,LTD 86--15801942596 Eric-wang@sapphire-substrate.com
4 Inch Sapphire Gallium Nitride Wafer 5um AlN Template

4 Inch Sapphire Gallium Nitride Wafer 5um AlN Template

Products - Gallium Nitride Wafer
  • High Light

    Sapphire Aluminum Nitride Wafer

    ,

    AlN Gallium Arsenide Wafer

    ,

    Gallium Nitride LED Wafer

  • Material
    All Layer On Sapphire Substrate
  • Size
    2inch/4inch
  • GaN Thickness
    1-5um
  • Type
    N-type
  • Application
    Semiconductor Device
  • Thickness
    430um Substrates
  • Surface
    Ssp Or Dsp
  • Place of Origin
    CHINA
  • Brand Name
    zmkj
  • Model Number
    AlN template
  • Minimum Order Quantity
    3pcs
  • Price
    150-250usd/pc
  • Packaging Details
    single wafer case by vacuum package
  • Delivery Time
    1-3weeks
  • Payment Terms
    T/T
  • Supply Ability
    50pcs per month

4 Inch Sapphire Gallium Nitride Wafer 5um AlN Template

  • 4 Inch Sapphire Gallium Nitride Wafer 5um AlN Template
  • 4 Inch Sapphire Gallium Nitride Wafer 5um AlN Template
  • 4 Inch Sapphire Gallium Nitride Wafer 5um AlN Template
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2inch 4inch AlN-on-Sapphire Epi-wafer 1-5um AlN template

8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer GaN-on-Si Epiwafer for Micro-LED  for RF application 

 

 

GaN Wafer Characteristic

  1. III-Nitride(GaN,AlN,InN)

Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is

a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.

 

Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.

Application

GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.

  • Laser Projection Display, Power Device, etc.       Date storage
  • Energy-efficient lighting                                        Full color fla display
  • Laser Projecttions                                                 High- Efficiency Electronic devices
  • High- Frequency Microwave Devices                   High-energy Detection and imagine
  • New energy solor hydrogen technology               Environment Detection and biological medicine

 

Related Gan-on-si epi-wafers 

 

For Power Application

 

Product specification 

Items Values/Scope
Substrate Si
Wafer diameter 4” / 6” / 8”
Epi-layer thickness 4-5 μm
Wafer bow <30 μm, Typical
Surface Morphology RMS<0.5nm in 5×5 μm²
Barrier AlXGa1-XN, 0<X<1
Cap layer In-situ SiN or GaN (D-mode); p-GaN (E-mode)
2DEG density >9E12/cm2 (20nm Al0.25GaN)
Electron mobility >1800 cm2/Vs (20nm Al0.25GaN)

 

For RF Application

 

Prodcut Specification 

Items Values/Scope
Substrate HR_Si / SiC
Wafer diameter 4’’/6’’ for SiC, 4”/ 6”/ 8” for HR_Si
Epi-layer thickness 2-3 μm
Wafer bow <30 μm, Typical
Surface Morphology RMS<0.5nm in 5×5 μm²
Barrier AlGaN or AlN or InAlN
Cap layer In-situ SiN or GaN

 

For LED Application

 

Items GaN-on-Si GaN-on-Sapphire
4”/ 6”/ 8” 2”/ 4”/ 6”
Epi-layer Thickness <4 μm <7 μm
Average Dominant/ Peak Wavelength 400-420nm, 440-460nm, 510-530nm 270-280nm, 440-460nm, 510-530nm
FWHM

<20nm for Blue/Near-UV

<40nm for Green

<15nm for UVC

<25nm for Blue

<40nm for Green
Wafer Bow <50 μm <180 μm

 

 

ABOUT  OUR OEM  Factory

4 Inch Sapphire Gallium Nitride Wafer 5um AlN Template 0

 

Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.

-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.

Q: How to pay?
100％T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-10pcs.
It depends on quantity and technics.

Q: Do you have inspection report for material?
We can supply ROHS report and reach reports for our products.

 

 

Tags:

gan wafer

gallium arsenide wafer

gallium phosphide wafers

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