4 Inch N Type 15° Semiconductor Substrate Si Doped GaAs Wafer SSP

Basic Information
Place of Origin: CHINA
Brand Name: zmkj
Model Number: GaAs-N-3inch
Minimum Order Quantity: 5pcs
Price: 100-200usd/pcs
Packaging Details: in single or 25pcs cassette wafer case by vacuum package
Delivery Time: 2-4weeks
Payment Terms: T/T, Western Union
Supply Ability: 2000pcs per month
Material: GaAs Crystal Method: VGF
Size: Dia76.2mm Thickess: 350um
Surface: DSP Application: Led,ld Device
Type: N-type Doping: SI-doped
High Light:

Si doped GaAs Wafe

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Semiconductor Substrate GaAs Wafe

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N type ssp wafer

 
 
VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type
Semi-insulating type for Microelectronics,
 
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(GaAs) Gallium Arsenide Wafers
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor
with a Zinc blende crystal structure.
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic
microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.[2]
 
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide,
aluminum gallium arsenide and others.
 
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GaAs Wafer Feature and Application

FeatureApplication field
High electron mobilityLight emitting diodes
High frequencyLaser diodes
High conversion efficiencyPhotovoltaic devices
Low power consumptionHigh Electron Mobility Transistor
Direct band gapHeterojunction Bipolar Transistor

4 Inch N Type 15° Semiconductor Substrate Si Doped GaAs Wafer SSP 0
Specification
Undoped GaAs
Semi-Insulating GaAs Specifications
 

Growth MethodVGF
DopantCarbon
Wafer Shape*Round (DIA: 2", 3", 4", and 6")
Surface Orientation**(100)±0.5°

*5" Wafers available upon request
**Other Orientations maybe available upon request
 

Resistivity (Ω.cm)≥1 × 107≥1 × 108
Mobility (cm2/V.S)≥ 5,000≥ 4,000
Etch Pitch Density (cm2)1,500-5,0001,500-5,000

 

Wafer Diameter (mm)50.8±0.376.2±0.3100±0.3150±0.3
Thickness (µm)350±25625±25625±25675±25
TTV [P/P] (µm)≤ 4≤ 4≤ 4≤ 4
TTV [P/E] (µm)≤ 10≤ 10≤ 10≤ 10
WARP (µm)≤10≤10≤10≤5
OF (mm)17±122±132.5±1NOTCH
OF / IF (mm)7±112±118±1N/A
Polish*E/E, P/E, P/PE/E, P/E, P/PE/E, P/E, P/PE/E, P/E, P/P

*E=Etched, P=Polished
4 Inch N Type 15° Semiconductor Substrate Si Doped GaAs Wafer SSP 1

Related Products for inventory list
 
2 inch SI-Dopant N-Type Gallium Arsenide wafer, SSP/DSP
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4 inch SI-Dopant N-Type Gallium Arsenide wafer, SSP/DSP
LED/LD Applications
6 inch SI-Dopant N-Type Gallium Arsenide wafer, SSP/DSP
LED/LD Applications
2 inch Undoped Gallium Arsenide wafer, SSP/DSP
Microelectronics Applications
4 inch Undoped Gallium Arsenide wafer, SSP/DSP
Microelectronics Applications
6 inch Undoped Gallium Arsenide wafer, SSP/DSP
Microelectronics Applications


Package & Delivery
4 Inch N Type 15° Semiconductor Substrate Si Doped GaAs Wafer SSP 2
4 Inch N Type 15° Semiconductor Substrate Si Doped GaAs Wafer SSP 3
4 Inch N Type 15° Semiconductor Substrate Si Doped GaAs Wafer SSP 4
FAQ & CONTACT    
This is Eric wang, sales manager of zmkj, our company located in Shanghai, China. Our service time is all time from Monday - Saturday. We are sorry for the inconvenience caused by time difference. If any questions, you can leave my E-mail a message and also add my WeChat,whats app, Skype, I will be online. Welcome to contact me!
 
Q: Are you trading company or manufacturer ?A: We  have our own for wafer fabricating. 
Q: How long is your delivery time? A: Generally it is 1-5 days if the goods are in stock,if not,it is for 2-3weeks
Q: Do you provide samples ? is it free or extra ? A: Yes, we could offer free sample by some size.
Q: What is your terms of payment ? A: for the first bussiness is 100% before delivery.
 
 
 
 

 

Contact Details
Manager

Phone Number : +8615801942596

WhatsApp : +8615801942596