4 Inch N Type 15° Semiconductor Substrate Si Doped GaAs Wafer SSP
-
High Light
Si doped GaAs Wafe
,Semiconductor Substrate GaAs Wafe
,N type ssp wafer
-
MaterialGaAs Crystal
-
MethodVGF
-
SizeDia76.2mm
-
Thickess350um
-
SurfaceDSP
-
ApplicationLed,ld Device
-
TypeN-type
-
DopingSI-doped
-
Place of OriginCHINA
-
Brand Namezmkj
-
Model NumberGaAs-N-3inch
-
Minimum Order Quantity5pcs
-
Price100-200usd/pcs
-
Packaging Detailsin single or 25pcs cassette wafer case by vacuum package
-
Delivery Time2-4weeks
-
Payment TermsT/T, Western Union
-
Supply Ability2000pcs per month
4 Inch N Type 15° Semiconductor Substrate Si Doped GaAs Wafer SSP
VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type
Semi-insulating type for Microelectronics,
--------------------------------------------------------------------------------------------------------------
(GaAs) Gallium Arsenide Wafers
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor
with a Zinc blende crystal structure.
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic
microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.[2]
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide,
aluminum gallium arsenide and others.
.
GaAs Wafer Feature and Application
| Feature | Application field |
|---|---|
| High electron mobility | Light emitting diodes |
| High frequency | Laser diodes |
| High conversion efficiency | Photovoltaic devices |
| Low power consumption | High Electron Mobility Transistor |
| Direct band gap | Heterojunction Bipolar Transistor |
Specification
Undoped GaAs
Semi-Insulating GaAs Specifications
| Growth Method | VGF |
| Dopant | Carbon |
| Wafer Shape* | Round (DIA: 2", 3", 4", and 6") |
| Surface Orientation** | (100)±0.5° |
*5" Wafers available upon request
**Other Orientations maybe available upon request
| Resistivity (Ω.cm) | ≥1 × 107 | ≥1 × 108 |
| Mobility (cm2/V.S) | ≥ 5,000 | ≥ 4,000 |
| Etch Pitch Density (cm2) | 1,500-5,000 | 1,500-5,000 |
| Wafer Diameter (mm) | 50.8±0.3 | 76.2±0.3 | 100±0.3 | 150±0.3 |
| Thickness (µm) | 350±25 | 625±25 | 625±25 | 675±25 |
| TTV [P/P] (µm) | ≤ 4 | ≤ 4 | ≤ 4 | ≤ 4 |
| TTV [P/E] (µm) | ≤ 10 | ≤ 10 | ≤ 10 | ≤ 10 |
| WARP (µm) | ≤10 | ≤10 | ≤10 | ≤5 |
| OF (mm) | 17±1 | 22±1 | 32.5±1 | NOTCH |
| OF / IF (mm) | 7±1 | 12±1 | 18±1 | N/A |
| Polish* | E/E, P/E, P/P | E/E, P/E, P/P | E/E, P/E, P/P | E/E, P/E, P/P |
*E=Etched, P=Polished
Related Products for inventory list | |
2 inch SI-Dopant N-Type Gallium Arsenide wafer, SSP/DSP | LED/LD Applications |
4 inch SI-Dopant N-Type Gallium Arsenide wafer, SSP/DSP | LED/LD Applications |
6 inch SI-Dopant N-Type Gallium Arsenide wafer, SSP/DSP | LED/LD Applications |
2 inch Undoped Gallium Arsenide wafer, SSP/DSP | Microelectronics Applications |
4 inch Undoped Gallium Arsenide wafer, SSP/DSP | Microelectronics Applications |
6 inch Undoped Gallium Arsenide wafer, SSP/DSP | Microelectronics Applications |
Package ＆ Delivery
FAQ & CONTACT
This is Eric wang, sales manager of zmkj, our company located in Shanghai, China. Our service time is all time from Monday - Saturday. We are sorry for the inconvenience caused by time difference. If any questions, you can leave my E-mail a message and also add my WeChat,whats app, Skype, I will be online. Welcome to contact me!
Q: Are you trading company or manufacturer ?A: We have our own for wafer fabricating.
Q: How long is your delivery time? A: Generally it is 1-5 days if the goods are in stock,if not,it is for 2-3weeks
Q: Do you provide samples ? is it free or extra ? A: Yes, we could offer free sample by some size.
Q: What is your terms of payment ? A: for the first bussiness is 100％ before delivery.
Our products are sold all over the world, you can rest assured.