Si Doped Undoped Laser Device Gallium Nitride Wafer

Si Doped Undoped Laser Device Gallium Nitride Wafer

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    laser device Gallium Nitride Wafer


    Undoped Gallium Nitride Wafer


    Undoped Gan wafer

  • Material
    GaN Single Crystal
  • Size
  • Thickness
  • Type
  • Application
    Laser Projection Display, Power Device
  • Growth
  • Place of Origin
  • Brand Name
  • Model Number
    GaN-FS-SIN-D-C50-SSP 2inch
  • Minimum Order Quantity
  • Price
  • Packaging Details
    single wafer case by vacuum package
  • Delivery Time
  • Payment Terms
    T/T, Western Union
  • Supply Ability
    50pcs per month

Si Doped Undoped Laser Device Gallium Nitride Wafer



2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane)


GaN Wafer Characteristic

  1. III-Nitride(GaN,AlN,InN)

Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is

a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.


Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.



GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.


  • High- Frequency Microwave Devices High-energy Detection and imagine
  • New energy solor hydrogen technology Environment Detection and biological medicine
  • Light source terahertz band
  • Laser Projection Display, Power Device, etc.       Date storage
  • Energy-efficient lighting                                        Full color fla display
  • Laser Projecttions                                                 High- Efficiency Electronic devices

Si Doped Undoped Laser Device Gallium Nitride Wafer 0

2 inch Free-Standing GaN Substrates Specification

Si Doped Undoped Laser Device Gallium Nitride Wafer 1

Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.

-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.

Q: How to pay?
100%T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.

Q: What's the MOQ?
(1) For inventory, the MOQ is 1pcs.
(2) For customized products, the MOQ is 5pcs-10pcs.
It depends on quantity and technics.

Q: Do you have inspection report for material?
We can supply ROHS report and reach reports for our products.



Si Doped Undoped Laser Device Gallium Nitride Wafer 2