Liquid Phase Method: A Key Technological Breakthrough in Future Silicon Carbide (SiC) Single-Crystal Growth

Liquid Phase Method: A Key Technological Breakthrough in Future Silicon Carbide (SiC) Single-Crystal Growth

Wide Bandgap Semiconductor Technology Innovation Alliance

As a third-generation wide-bandgap semiconductor material, silicon carbide (SiC) boasts exceptional physical and electrical properties, making it highly promising for high-frequency, high-voltage, and high-power semiconductor devices. SiC finds applications in sectors such as power electronics, telecommunications, automotive, and energy, forming the foundation for modern, efficient, and stable energy systems as well as the intelligent electrification of the future. However, producing SiC single-crystal substrates remains a significant technical challenge. The high-temperature, low-pressure environment and various variables involved in crystal growth have slowed the commercialization of SiC applications.

Currently, the physical vapor transport (PVT) method is the most widely adopted technique for SiC single-crystal growth in industrial applications. However, this method faces significant difficulties in producing p-type 4H-SiC and cubic 3C-SiC single crystals. The limitations of the PVT method hinder SiC’s performance in specific applications, such as high-frequency, high-voltage, and high-power IGBT (Insulated Gate Bipolar Transistor) devices and highly reliable, long-lifespan MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) devices.

Against this backdrop, the liquid phase method has emerged as a promising new technology for growing SiC single crystals. It demonstrates distinct advantages, particularly in producing p-type 4H-SiC and 3C-SiC single crystals. This method achieves high-quality crystal growth at relatively lower temperatures, laying a solid foundation for manufacturing high-performance semiconductor devices. Compared to the PVT method, the liquid phase method allows greater control over factors such as doping, lattice structure, and growth rate, offering greater flexibility and adjustability, which provides effective solutions to the challenges in conventional SiC production.

The Advantages of the Liquid Phase Method

Despite some technical challenges in industrializing the liquid phase method, such as stability in crystal growth, cost control, and equipment requirements, continuous technological advancements and growing market demand suggest that this method could become a mainstream SiC single-crystal growth approach. It is particularly promising for manufacturing high-power, low-loss, highly stable, and long-lifespan electronic devices.

Recently, Associate Researcher Li Hui from the Institute of Physics, Chinese Academy of Sciences, delivered a talk on the “Growth of SiC Single Crystals Using the Liquid Phase Method,” presenting application solutions for various SiC crystal types. Notably, breakthroughs in the growth of 3C-SiC and p-type 4H-SiC single crystals have opened new pathways for the industrialization of SiC materials. These advancements provide a strong foundation for developing automotive-grade, industrial-grade, and high-end electronic devices.

The Physical Advantages of Silicon Carbide

Li Hui highlighted the significant physical advantages of SiC compared to silicon (Si), which is still the most widely used material in power semiconductors:

• Higher Breakdown Field: SiC’s breakdown field is 10 times that of silicon, enabling it to withstand higher voltages without breakdown. This makes SiC devices highly competitive in high-voltage applications.
• Higher Saturated Electron Drift Velocity: SiC’s drift velocity is twice that of silicon, allowing it to operate at higher frequencies and enhance device efficiency and response speed, which is critical for high-speed applications.
• Higher Thermal Conductivity: SiC’s thermal conductivity is three times that of silicon and 10 times that of gallium arsenide (GaAs), enabling efficient heat dissipation, higher power density, and reduced thermal losses under heavy loads.

Challenges and Future Prospects

While the liquid phase method offers numerous advantages, further research and development are required to address challenges such as ensuring stable growth processes, reducing production costs, and optimizing equipment. With collaborative efforts among research institutions and industries, the liquid phase method is expected to play a critical role in advancing SiC technologies for high-performance applications.

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