Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

Basic Information
Place of Origin: CHINA
Brand Name: zmkj
Model Number: InP
Minimum Order Quantity: 3pcs
Price: by case
Packaging Details: single wafer package in 1000-grade cleaning room
Delivery Time: 2-4weeks
Payment Terms: T/T, Western Union
Supply Ability: 500pcs
Material: InP Growth Method: VFG
SIZE: 2~ 4 INCH Thickness: 350-650um
Application: III-V Direct Bandgap Semiconductor Material Surface: Ssp/dsp
Package: Single Wafer Box
High Light:

InP Semiconductor Substrate


Single Crystal Semiconductor Substrate


650um InP wafers

2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe +


growth (modified VFG method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed.

The dopant (Fe, S, Sn or Zn)is added to the crucible along with the polycrystal. High pressure is applied inside the chamber to prevent decomposition of the Indium Phosphide.he company has developed a process to yield fully stoechiometric, high purity and low dislocation density inP single crystal.

The VFG technique improves upon the LEC method thanks to a thermal baffle technology in connection with a numerical

modeling of thermal growth conditions. tCZ is a cost-effective mature technology with high quality reproducibility from boule to boule.


IIt has the advantages of high electronic limit drift speed, good radiation resistance and good heat conduction. Suitable for manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.


1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.
2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product processing


Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate 0

Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate 1

Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate 2

size (mm) Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized 
ra Surface roughness(Ra):<=5A
polish single or doubles side polished
package 100 grade cleaning plastic bag in 1000 cleaning room 


Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate 3Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate 4

---FAQ –

Q: Are you trading company or manufacturer ?

A: zmkj is a trading company but have a sapphire manufacturer 
as a supplier of semiconductor materials wafers for a wide span of applications.

Q: How long is your delivery time?

A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not

in stock,it is according to quantity.

Q: Do you provide samples ? is it free or extra ?

A: Yes, we could offer the sample for free charge but do not pay the cost of freight.

Q: What is your terms of payment ?

A: Payment<=1000USD, 100% in advance. Payment>=1000USD,
50% T/T in advance ,balance before shippment.
If you have another question, pls feel free to contact us as below:

Contact Details

Phone Number : +8615801942596

WhatsApp : +8615801942596