Case Study: ZMSH's Innovation with the New 4H/6H-P 3C-N SiC Substrate

Background

ZMSH has long been a leader in silicon carbide (SiC) wafer and substrate technology, providing 6H-SiC and 4H-SiC crystal substrates for the production of high-frequency, high-power, high-temperature, and radiation-resistant electronic devices. As market demand for higher-performance electronic devices continues to grow, ZMSH has invested in research and development, resulting in the launch of a new generation of 4H/6H-P 3C-N SiC crystal substrates. This product integrates traditional 4H/6H polytype SiC substrates with new 3C-N SiC films, offering significant performance enhancements for next-generation high-power and high-frequency electronic devices.

Analysis of Existing Products: 6H-SiC and 4H-SiC Crystal Substrates

Product Features

• Crystal Structure: Both 6H-SiC and 4H-SiC have hexagonal crystal structures. The 6H type has slightly lower electron mobility and a narrower bandgap, while the 4H type provides higher electron mobility and a wider bandgap (3.2 eV), making it ideal for high-frequency and high-power devices.
• Conductivity Type: Supports N-type or semi-insulating, catering to various device design requirements.
• Thermal Conductivity: SiC substrates offer thermal conductivity between 3.2–4.9 W/cm·K, ensuring effective heat dissipation, which is critical for high-temperature electronics.
• Mechanical Properties: With high hardness (Mohs hardness of 9.2), SiC substrates offer mechanical stability, making them suitable for wear-resistant and mechanically demanding applications.
• Applications: These substrates are primarily used in power electronic devices, high-frequency devices, and some high-temperature and radiation-resistant applications.

Technical Limitations
Although 6H-SiC and 4H-SiC have performed well in the market, their performance still falls short in certain high-frequency, high-power, and high-temperature applications. Challenges such as high defect rates, limited electron mobility, and bandgap constraints mean that the performance of these materials has not yet fully met the needs of next-generation electronic devices. Therefore, the market demands higher-performance, lower-defect materials to enhance device efficiency and stability.

Innovation in the New Product: 4H/6H-P 3C-N SiC Crystal Substrates

To address the limitations of traditional 6H and 4H-SiC materials, ZMSH has introduced the innovative 4H/6H-P 3C-N SiC crystal substrate. By epitaxially growing 3C-N SiC films on 4H/6H-SiC substrates, the new product significantly improves material performance.

Technological Advancements

• Polytype Integration Technology: Using chemical vapor deposition (CVD) technology, 3C-SiC films are precisely epitaxially grown on 4H/6H-SiC substrates, reducing lattice mismatch and defect density, thus improving the structural integrity of the material.
• Improved Electron Mobility: Compared to traditional 4H/6H-SiC, the 3C-SiC crystal offers higher electron mobility, making the new material more suitable for high-frequency applications.
• Higher Breakdown Voltage: Electrical performance tests show significant improvement in breakdown voltage, making the product more suitable for high-power applications.
• Low Defect Rate: Optimized growth conditions have significantly reduced crystal defects and dislocations, enabling the material to maintain long-term stability in high-pressure and high-temperature environments.
• Optoelectronic Integration: 3C-SiC has unique optoelectronic properties, particularly suitable for ultraviolet detectors and other optoelectronic applications, expanding the product's application range.

Key Advantages of the New Product

• Higher Electron Mobility and Breakdown Voltage: Compared to 6H and 4H-SiC, the 3C-N SiC film allows electronic devices to perform more stably under high-frequency and high-power conditions, with improved transmission efficiency and longer device lifespan.
• Enhanced Thermal Conductivity and Stability: The new SiC material exhibits improved thermal conductivity and stability at high temperatures, making it ideal for applications above 1000°C.
• Integrated Optoelectronic Properties: The optoelectronic characteristics of 3C-SiC further enhance the competitiveness of SiC substrates in the optoelectronic device market, especially in ultraviolet detection and optical sensor applications.
• Chemical Stability and Corrosion Resistance: The new SiC material has increased stability in chemical corrosion and oxidation environments, making it suitable for more demanding industrial settings.

Application Scenarios

The new 4H/6H-P 3C-N SiC crystal substrate, with its superior electronic and optoelectronic properties, is ideal for the following key areas:

1. Power Electronics: Its high breakdown voltage and excellent thermal conductivity make it an ideal choice for high-power devices such as MOSFETs, IGBTs, and Schottky diodes.
2. High-Frequency RF and Microwave Devices: The high electron mobility makes it perform exceptionally well in high-frequency RF and microwave devices.
3. Ultraviolet Detectors and Optoelectronics: The optoelectronic properties of 3C-SiC make the new product particularly suitable for developing ultraviolet detectors and optoelectronic sensors.

Case Conclusion and New Product Recommendation

ZMSH has successfully launched the new generation of 4H/6H-P 3C-N SiC crystal substrates through technological innovation, significantly enhancing SiC materials' competitiveness in the high-power, high-frequency, and optoelectronic application markets. By epitaxially growing 3C-N SiC films, the new product reduces lattice mismatch and defect rates, improves electron mobility and breakdown voltage, and ensures long-term stable operation in harsh environments. This product is not only suitable for traditional power electronics but also expands application scenarios in optoelectronics and ultraviolet detection.

ZMSH recommends its customers adopt the new 4H/6H-P 3C-N SiC crystal substrate to meet future high-power, high-frequency, and optoelectronic devices' increasing performance requirements. By embracing this technological innovation, customers can enhance product performance and stand out in an increasingly competitive market.

Product Recommendation

4H/6H P-Type Sic Wafer 4inch 6inch Z Grade P Grade D Grade Off Axis 2.0°-4.0° Toward P-type Doping

4H and 6H P-type silicon carbide (SiC) wafers are critical materials in advanced semiconductor devices, especially for high-power and high-frequency applications. SiC’s wide bandgap, high thermal conductivity, and excellent breakdown field strength make it ideal for operations in harsh environments where traditional silicon-based devices may fail. P-type doping in SiC, achieved through elements like aluminum or boron, introduces positive charge carriers (holes), enabling the fabrication of power devices such as diodes, transistors, and thyristors.