Industrial Semiconductor Substrate S Fe Zn Doped InP Indium Phosphide Single Crystal Wafer

Basic Information
Place of Origin: china
Brand Name: zmkj
Model Number: 2-4inch inp
Minimum Order Quantity: 3pcs
Price: by case
Packaging Details: single wafer box
Delivery Time: 2-4weeks
Payment Terms: Western Union, T/T, , MoneyGram
Supply Ability: 100pcs
Material: InP Single Crystal Wafer Size: 2inch/3inch/4inch
Type: N/P Advantage: High Electronic Limit Drift Speed, Good Radiation Resistance And Good Thermal Conductivity.
Doped: Fe/s/zn/undoped Apsplications: For Solid-state Lighting, Microwave Communication, Fiber-optic Communication,
High Light:

gasb substrate

,

wafer substrate

 

2inch/3inch/4inch S/Fe/Zn doped InP Indium Phosphide Single Crystal Wafer

 

Indium phosphide (InP) is an important compound semiconductor material with the advantages of high electronic limit drift speed, good radiation resistance and good thermal conductivity. Suitable for manufacturing high frequency, high speed, high power microwave devices and integrated circuits. It is widely used in solid-state lighting, microwave communication, fiber-optic communication, solar cells, guidance/navigation, satellite and other fields of civil and military applications.

 

zmkj can offers InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (“zinc blende”) crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

 

Industrial Semiconductor Substrate S Fe Zn Doped InP Indium Phosphide Single Crystal Wafer 0

InP Wafer processing
4 Inch Semi - Insulating Indium Phosphide Wafer For LD Laser Diode
Each ingot is cut into wafers which are lapped, polished and surface prepared for epitaxy. The overall process is detailed hereunder.

4 Inch Semi - Insulating Indium Phosphide Wafer For LD Laser Diode
Flat specification and identification The orientation is indicated on the wafers by two flats (long flat for orientation, small flat for identification). Usually the E.J. standard (European-Japanese) is used. The alternate flat configuration (U.S.) is mostly used for Ø 4" wafers.
4 Inch Semi - Insulating Indium Phosphide Wafer For LD Laser Diode
Orientation of the boule Either exact (100) or misoriented wafers are offered.
4 Inch Semi - Insulating Indium Phosphide Wafer For LD Laser Diode
Accuracy of the orientation of OF In response to the needs of the optoelectronic industry, we offers wafers with excellent accuracy of the OF orientation : < 0.02 degrees. This feature is an important benefit to customers making edge-emitting lasers and also to manufacturers who cleave to separate dies – allowing their designers to reduce the “real-estate” wasted in the streets.
4 Inch Semi - Insulating Indium Phosphide Wafer For LD Laser Diode
Edge profile There are two common specs : chemical edge processing or mechanical edge processing (with an edge grinder).
4 Inch Semi - Insulating Indium Phosphide Wafer For LD Laser Diode
Polishing Wafers are polished by means of a chemical-mechanical process resulting in a flat, damage-free surface. we provides both double-side polished and single-side polished (with lapped and etched back side) wafers.
4 Inch Semi - Insulating Indium Phosphide Wafer For LD Laser Diode
Final surface preparation and packaging Wafers go through many chemical steps to remove the oxide produced during polishing and to create a clean surface with stable and uniform oxide layer that is ready for epitaxial growth - epiready surface and that reduces trace elements to extremely low levels . After final inspection, the wafers are packaged in a way that maintains the surface cleanliness.
Specific instructions for oxide removal are available for all types of epitaxial technologies (MOCVD, MBE).
4 Inch Semi - Insulating Indium Phosphide Wafer For LD Laser Diode
Database As part of our Statistical Process Control/Total Quality Management Program, extensive database recording the electrical and mechanical properties for every ingot as well as crystal quality and surface analysis of wafers are available. At each stage of fabrication, the product is inspected before passing to the next stage to maintain a high level of quality consistency from wafer to wafer and from boule to boule.

 

s'pecification for 2-4inch 

Industrial Semiconductor Substrate S Fe Zn Doped InP Indium Phosphide Single Crystal Wafer 9

 

Our other related products wafers

 

            sapphire wafers                                sic wafers                            GaAs wafers 

Industrial Semiconductor Substrate S Fe Zn Doped InP Indium Phosphide Single Crystal Wafer 10Industrial Semiconductor Substrate S Fe Zn Doped InP Indium Phosphide Single Crystal Wafer 11Industrial Semiconductor Substrate S Fe Zn Doped InP Indium Phosphide Single Crystal Wafer 12

 

About our company
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.
Industrial Semiconductor Substrate S Fe Zn Doped InP Indium Phosphide Single Crystal Wafer 13

Contact Details
Manager

Phone Number : +8615801942596

WhatsApp : +8615801942596