• III - Nitride 2 INCH Free Standing GaN Wafer For Laser Projection Display Power Device
  • III - Nitride 2 INCH Free Standing GaN Wafer For Laser Projection Display Power Device
  • III - Nitride 2 INCH Free Standing GaN Wafer For Laser Projection Display Power Device
III - Nitride 2 INCH Free Standing GaN Wafer For Laser Projection Display Power Device

III - Nitride 2 INCH Free Standing GaN Wafer For Laser Projection Display Power Device

Product Details:

Place of Origin: CHINA
Brand Name: zmkj
Model Number: GaN-FS-C-U-C50-SSP 2inch

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: 1200~2500usd/pc
Packaging Details: single wafer case by vacuum package
Delivery Time: 1-5weeks
Payment Terms: T/T
Supply Ability: 50pcs per month
Get Best Price Contact Now

Detail Information

Material: GaN Single Crystal Size: 2inch
Thickness: 0.35mm Type: N-type/semi-type
Application: Laser Projection Display, Power Device Growth: HVPE
High Light:

gan wafer

,

gallium arsenide wafer

Product Description

2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane)

 

GaN Wafer Characteristic

  1. III-Nitride(GaN,AlN,InN)

Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is

a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.

 

Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.

 

2 inch Free-Standing GaN Substrates Specification

III - Nitride 2 INCH Free Standing GaN Wafer For Laser Projection Display Power Device 0

  n-type p-type Semi-insulating
n [cm-3] up to 1019 - -
p [cm-3] - up to 1018 -
p [cm-3] 10-3-10-2 102-103 109-1012
μ [cm2/Vs] up to 150 - -
Total Thickness Variation (TTV)/µm <40 <40 <40
Bow/µm <10 <10 <10
FWHM [arcsec] of X-ray rocking curve, epi-ready surface, at 100 μm x 100 μm slit <20
Dislocation Density [cm-2] <105
Misorientation/deg On demand
Surface Finish As cut / ground
Roughly polished
Optically polished (RMS < 3 nm)
Epi-ready (RMS < 0.5 nm)

Advantages of this Specification 

  Smaller Curvature Fewer Dislocations More Electrical Carriers
Lasers Higher Yields Lower threshold voltage Higher power
LEDs Better efficiency (IQE)
Transistors Lower leakage current Higher po

Application:

GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.

 

  • High- Frequency Microwave Devices High-energy Detection and imagine
  • New energy solor hydrogen technology Environment Detection and biological medicine
  • Light source terahertz band
  • Laser Projection Display, Power Device, etc.       Date storage
  • Energy-efficient lighting                                        Full color fla display
  • Laser Projecttions                                                 High- Efficiency Electronic devices

III - Nitride 2 INCH Free Standing GaN Wafer For Laser Projection Display Power Device 1

 

 

ABOUT  OUR OEM  Factory

III - Nitride 2 INCH Free Standing GaN Wafer For Laser Projection Display Power Device 2

 

Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.

-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.

Q: How to pay?
100%T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-10pcs.
It depends on quantity and technics.

Q: Do you have inspection report for material?
We can supply ROHS report and reach reports for our products.

 

Package 

III - Nitride 2 INCH Free Standing GaN Wafer For Laser Projection Display Power Device 3

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