Blog Details

I. ​Gallium Nitride (GaN)​
Gallium nitride (GaN) is an inorganic chemical compound with the formula ​​GaN​​, composed of gallium (Ga) and nitrogen (N). As a ​​third-generation semiconductor material​​, it typically exists as a white or slightly yellow solid powder. Key material properties include:

• ​​Structural stability​​ under extreme conditions
• ​​High melting point​​ (>1700°C)
• ​​High voltage resistance​​ (breakdown field ~3.3 MV/cm)
• ​​Radiation tolerance​​ (effective for space and nuclear environments)

This wide-bandgap semiconductor exhibits superior performance in harsh operating environments compared to traditional silicon-based materials, making it critical for applications in power electronics, radio frequency (RF) systems, and optoelectronics.

II. Market Size and Growth Trends 
With the continuous expansion of gallium nitride (GaN) technology from consumer electronics into high-power applications such as electric vehicles (EVs), photovoltaic energy storage, and data centers, the global GaN power device market is experiencing accelerated growth:
​​Market Data​​:

• In 2022, the market size reached 180 million USD, projected to hit 1.33 billion USD by 2026, with a compound annual growth rate (CAGR) of 65% .
• Consumer electronics remains the dominant market segment, accounting for approximately 146 million USD in 2022, expected to surge to 1.307 billion USD by 2028 (Yole Développement).

​​Application Expansion​​:

The application scope has broadened from traditional smartphone fast charging and power adapters to mid-to-high-power scenarios including new energy vehicle onboard chargers (OBCs), telecommunications base stations, photovoltaic inverters, data center servers, industrial power supplies, and energy storage systems.

III. Technical Development Trends and Application Evolution

​​1. Technical Trends​​

• ​​High Integration​​: Co-packaging of drivers with GaN power devices to reduce peripheral components
• ​​High Reliability​​: Enhanced radiation hardness and surge immunity
• ​​High Efficiency​​: Low on-resistance, high switching frequency, improved power density, and system conversion efficiency

​​2. Application Expansion Scenarios​​

IV. Summary and Outlook
Gallium nitride (GaN), as the core representative of third-generation semiconductors, is accelerating its penetration into core domains such as power conversion, fast charging, and automotive electric control systems, leveraging its advantages of high frequency, high efficiency, and high integration.

​​Projections for the next five years​​:

1. Market scale will continue to double in size. While GaN devices maintain steady growth in consumer electronics, they will gradually penetrate high-value scenarios including automotive powertrain systems, AI servers, and photovoltaic inverters.
2. The technology ecosystem will transition from "device-driven" to "system-synergized". Integrated modules, driver algorithms, and application-specific optimization will become the core competitive differentiators.