5um Thickness AlN Aluminum Nitride Template 430um Sapphire 350um Sic Substrates

Basic Information
Place of Origin: CHINA
Brand Name: zmkj
Model Number: 2-4inch template
Minimum Order Quantity: 5pcs
Price: by case
Packaging Details: single wafer case by vacuum package
Delivery Time: 1-5weeks
Payment Terms: T/T, Western Union
Supply Ability: 50pcs per month
Material: Aluminum Nitride Substrates Size: 2inch
Thickness: 4-5um On 0.43mm Type: Template
Application: Laser Projection Display, Power Device Growth: HVPE
High Light:

gan wafer


gallium phosphide wafers

2inch 5um thickness AlN Aluminum Nitride Template on 430um sapphire/ 350um Sic substrates

AlN  Wafer Characteristic

  1. III-Nitride(GaN,AlN,InN)

2inch AlN template on sapphire or sic substrates, HVPE Gallium Nitride wafer,AlN substrates on GaN

We offer single crystalline AlN substrates on c-plane sapphire template,which called AlN wafer or AlN template,for UV LEDs, semiconductor devices and AlGaN epitaxial growth.Our epi-ready, C-plane AlN substrates have good XRD FWHM or dislocation density. The available thickness is from 30nm to 5um.
Our single crystal Aluminum Nitride substrates with low dislocation has widely application:including UV LED,detectors, IR seekers windows, epitaxial growth of III-nitrides,Laser, RF transistors and other semiconductor device.

Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.
AlN template is used for development of HEMT structures, resonant tunneling diodes and

acoustoelectronic devices


2-4 inch AlN templates Specification



  2” AlN Templates 4inch
Item AlN-T
Dimensions Ф 2”
Substrate Sapphire, SiC, GaN
Thickness 4-5um
Orientation C-axis(0001) ± 1°
Conduction Type Semi-Insulating
Dislocation Density XRD FWHM of (0002) < 200 arcsec.
XRD FWHM of (10-12) < 1000 arcsec
Useable Surface Area > 80%
Polishing Standard: SSP
Option: DSP
Package Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

5um Thickness AlN Aluminum Nitride Template 430um Sapphire 350um Sic Substrates 0



GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.


  • High- Frequency Microwave Devices High-energy Detection and imagine
  • New energy solor hydrogen technology Environment Detection and biological medicine
  • Light source terahertz band
  • Laser Projection Display, Power Device, etc. Date storage
  • Energy-efficient lighting Full color fla display
  • Laser Projecttions High- Efficiency Electronic devices




5um Thickness AlN Aluminum Nitride Template 430um Sapphire 350um Sic Substrates 1


Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.
5um Thickness AlN Aluminum Nitride Template 430um Sapphire 350um Sic Substrates 2
-FAQ –

Q: What's the MOQ?
(1) For inventory, the MOQ is 2pcs.
(2) For customized products, the MOQ is 5pcs-10pcs.
It depends on quantity and technics.

Q: Do you have inspection report for material?
We can supply ROHS report and reach reports for our products.

Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.

Q: How to pay?
100%T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.

Contact Details

Phone Number : +8615801942596

WhatsApp : +8615801942596