2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots

Basic Information
Place of Origin: CHINA
Brand Name: ZMKJ
Model Number: 6H-N
Minimum Order Quantity: 1pcs
Price: by case
Packaging Details: single wafer package in 100-grade cleaning room
Delivery Time: 1-6weeks
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 1-50pcs/month
Material: SiC Single Crystal 6H-N Type Grade: Dummy
Thicnkss: 0.35MM/10-15mm Suraface: Polished
Application: Bearing Test Diameter: 2inch
Color: Green
High Light:

silicon carbide substrate

,

sic wafer

 

 
Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61
ne = 2.66

no = 2.60
ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K

 
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

 

4 inch n-doped 4H Silicon Carbide SiC Wafer

 High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification
 

2inch diameter Silicon Carbide (SiC) Substrate Specification  
Grade Zero MPD Grade Production Grade Research Grade Dummy Grade  
 
Diameter 50.8 mm±0.2mm  
 
Thickness 330 μm±25μm or 430±25um  
 
Wafer Orientation Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI  
 
Micropipe Density ≤0 cm-2 ≤5 cm-2 ≤15 cm-2 ≤100 cm-2  
 
Resistivity 4H-N 0.015~0.028 Ω•cm  
 
6H-N 0.02~0.1 Ω•cm  
 
4/6H-SI ≥1E5 Ω·cm  
 
Primary Flat {10-10}±5.0°  
 
Primary Flat Length 18.5 mm±2.0 mm  
 
Secondary Flat Length 10.0mm±2.0 mm  
 
Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°  
 
Edge exclusion 1 mm  
 
TTV/Bow /Warp ≤10μm /≤10μm /≤15μm  
 
Roughness Polish Ra≤1 nm  
 
CMP Ra≤0.5 nm  
 
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm  
 
 
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%  
 
Polytype Areas by high intensity light None Cumulative area ≤2% Cumulative area ≤5%  
 
 
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length  
 
 
edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each  

 

 

2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots 1
 

2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots 22 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots 3
 2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots 4
 
CATALOGUE   COMMON  SIZE    
 

 

4H-N Type / High Purity  SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

 
4H Semi-insulating /  High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
 
 
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
 
 Customzied size for 2-6inch 
 

SiC Applications 

Application areas

  • 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
  • diodes, IGBT, MOSFET
  • 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.

 

2 INCH 6H-N Silicon Carbide Wafer Type MPD 50cm 330um SiC Crystal Wafers Ingots 5

Contact Details
Manager

Phone Number : +8615801942596

WhatsApp : +8615801942596